Zobrazeno 1 - 10
of 110
pro vyhledávání: '"SUSUMU IIDA"'
Publikováno v:
Physiological Reports, Vol 10, Iss 8, Pp n/a-n/a (2022)
Abstract The incidence of aortic stenosis (AS) increases with age and is a serious problem in an aging society. In recent years, transcatheter aortic valve implantation (TAVI) has been performed widely; however, older patients may be ineligible for T
Externí odkaz:
https://doaj.org/article/22fc1d1eca974c8d85133db07ba71a63
Autor:
Susumu Iida, Takayuki Uchiyama
Publikováno v:
Micro and Nano Engineering, Vol 3, Iss , Pp 44-49 (2019)
Standard samples with programmed micro-defects were fabricated for evaluating the defect detection capability of the next generation of pattern inspection tools. A 1.5-nm protrusion programmed defect and a 4-nm-wide (
Externí odkaz:
https://doaj.org/article/3ecf2c348767449fbb54ccb41ad1d195
Publikováno v:
Physiological Reports, Vol 9, Iss 5, Pp n/a-n/a (2021)
Abstract Background The Borg scale is used to determine exercise intensity in rehabilitation but can be difficult for older adults to understand. By contrast, face scale that are used to evaluate pain are much easier to understand thanks to the inclu
Externí odkaz:
https://doaj.org/article/887b52e0bd074f979635d39d86108d49
Publikováno v:
Journal of the Atomic Energy Society of Japan. 63:50-54
Autor:
Takayuki Uchiyama, Susumu Iida
Publikováno v:
Micro and Nano Engineering, Vol 3, Iss, Pp 44-49 (2019)
Standard samples with programmed micro-defects were fabricated for evaluating the defect detection capability of the next generation of pattern inspection tools. A 1.5-nm protrusion programmed defect and a 4-nm-wide (
Autor:
Tadashi Narabayashi, Masanobu Kamiya, Katsuya Kuroiwa, Susumu Iida, Katsumi Ebisawa, Toshihiro Aida
Publikováno v:
Journal of the Atomic Energy Society of Japan. 59:530-534
Autor:
Shunko Magoshi, Satoshi Tanaka, Susumu Iida, Takashi Kamo, Takayuki Uchiyama, Yasutaka Morikawa, Takeshi Yamane
Publikováno v:
Extreme Ultraviolet (EUV) Lithography X.
We report on the reduction of the mask 3D effect in an etched 40-pair multilayer extreme ultraviolet (EUV) lithography mask by measuring the printed ΔCD (horizontal–vertical) on exposure with a high-NA small field exposure tool (HSFET). We compare
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXIII.
Standard wafers with programmed defects (PDs) were fabricated to evaluate charge control techniques, resolution, and defect detection capabilities of pattern inspection tools for 7-nm and smaller nodes. To evaluate charge control techniques, the PDs
Publikováno v:
Applied Surface Science. 384:244-250
The effects of the presence of a native oxide film or surface contamination as well as variations in material density on the total electron yield (TEY) of Ru and B 4 C were assessed in the absence of any surface charging effect. The experimental resu
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS. 18:1
Background: Continued shrinkage of pattern size has caused difficulties in detecting small defects. Multibeam scanning electron microscopy (SEM) is a potential method for pattern inspection below 7-nm node. Performance of the tool depends on charge c