Zobrazeno 1 - 10
of 42
pro vyhledávání: '"SOROUSH GHANDIPARSI"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 385-398 (2023)
In this work, we demonstrate and model the deep-level defect physics of semi-insulating gallium arsenide bulk photoconductive semiconductor switches (PCSS) with gap size of $10 ~\mu \text{m}$ and $25 ~\mu \text{m}$ in dark-mode operation. Experimenta
Externí odkaz:
https://doaj.org/article/f40f53b06d3f420dbf36699980fb9bca
Publikováno v:
Machine Learning with Applications, Vol 10, Iss , Pp 100424- (2022)
Initial fault detection and diagnostics are imperative measures to improve the efficiency, safety, and stability of vehicle operation. In recent years, numerous studies have investigated data-driven approaches to improve the vehicle diagnostics proce
Externí odkaz:
https://doaj.org/article/96319186f6b94bbe951489cf717499b2
Autor:
Cesar Bartolo-Perez, Wayesh Qarony, Soroush Ghandiparsi, Ahmed S. Mayet, Ahasan Ahamed, Hilal Cansizoglu, Yang Gao, Ekaterina Ponizovskaya Devine, Toshishige Yamada, Aly F. Elrefaie, Shih-Yuan Wang, M. Saif Islam
Publikováno v:
Advanced Photonics Research, Vol 2, Iss 6, Pp n/a-n/a (2021)
Silicon photodetectors (PDs) operating at near‐IR wavelengths with high speed and high sensitivity are becoming critical for emerging applications, such as light detection and ranging (LIDAR) systems, quantum communications, and medical imaging. Ho
Externí odkaz:
https://doaj.org/article/34272776c0d94d2c87cc0a1fc097e9ce
Autor:
Benjamin L. Dutton, Cassandra Remple, Jani Jesenovec, Soroush Ghandiparsi, Miranda S. Gottlieb, Joel B. Varley, Lars F. Voss, Matthew D. McCluskey, John S. McCloy
Publikováno v:
Oxide-based Materials and Devices XIV.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0c075ce570d2c1ff30212712a80817c
https://doi.org/10.1117/12.2650406
https://doi.org/10.1117/12.2650406
Autor:
Arash Ahmadivand, Badriyah Alhalaili, Cesar Bartolo-Perez, Daniel Benedikovič, John E. Bowers, Werner Brockherde, Mario Caironi, Adriano Cola, Annalisa Convertino, Marc Currie, Pouya Dianat, Daniel Durini, Canek Fuentes-Hernandez, Soroush Ghandiparsi, Thomas A. Heuser, Bedrich J. Hosticka, M. Saif Islam, Hakan Karaagac, Mustafa Karabiyik, Gabriella Leo, Guo-Qiang Lo, Ahmed S. Mayet, Lisa N. Mcphillips, Ruth A. Miller, Bahram Nabet, Tadao Nagatsuma, Dario Natali, Matthew M. Ombaba, Nezih Pala, Uwe Paschen, Vincenzo Pecunia, Elif Peksu, Anna Persano, Molly Piels, Fabio Quaranta, Peter F. Satterthwaite, Debbie G. Senesky, Hongyun So, Ananth Saran Yalamarthy, Shiyang Zhu
Publikováno v:
Photodetectors ISBN: 9780081027950
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5746ebf52d9eda1070d3624bcbbc270f
https://doi.org/10.1016/b978-0-08-102795-0.00017-7
https://doi.org/10.1016/b978-0-08-102795-0.00017-7
Autor:
Wayesh Qarony, Ahmed S. Mayet, Ekaterina Ponizovskaya Devine, SOROUSH GHANDIPARSI, Cesar Bartolo-Perez, Ahasan Ahamed, Amita Rawat, Hasina Mamtaz, Toshishige Yamada, Shih-Yuan Wang, M. Saif Islam
The photosensitivity of silicon is inherently very low in the visible electromagnetic spectrum, and it drops rapidly beyond 800 nm in near-infrared wavelengths. Herein, we have experimentally demonstrated a technique utilizing photon-trapping surface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c585b99da1fa0499043e8c5c80b42b4c
Publikováno v:
Photodetectors ISBN: 9780081027950
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ae89a2208201f247b190abf1b509c17
https://doi.org/10.1016/b978-0-08-102795-0.00019-0
https://doi.org/10.1016/b978-0-08-102795-0.00019-0
Autor:
Toshishige Yamada, M. Saif Islam, Ahasan Ahamed, Wayesh Qarony, Ekaterina Ponizovskaya Devine, Aly F. Elrefaie, Ahmed S. Mayet, Shih-Yuan Wang, Soroush Ghandiparsi, Cesar Bartolo-Perez
Publikováno v:
IEEE Sensors Journal. 21:10556-10562
Silicon photodiode-based CMOS sensors with backside-illumination for 300–1100 nm wavelength range were studied. We showed that a single hole in the photodiode increases the optical efficiency of the pixel. In near-infrared wavelengths, the enhancem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d18954764aa871d760bfd19a65e3e861
https://doi.org/10.1109/jsen.2021.3057904
https://doi.org/10.1109/jsen.2021.3057904
Autor:
Cesar Bartolo-Perez, Ahasan Ahamed, Ahmed S. Mayet, Amita Rawat, Lisa McPhillips, Soroush Ghandiparsi, Julien Bec, Gerard Ariño-Estrada, Simon Cherry, Shih-Yuan Wang, Laura Marcu, M. Saif Islam
Publikováno v:
Opt Express
Optics express, vol 30, iss 10
Optics express, vol 30, iss 10
Avalanche and Single-Photon Avalanche photodetectors (APDs and SPADs) rely on the probability of photogenerated carriers to trigger a multiplication process. Photon penetration depth plays a vital role in this process. In silicon APDs, a significant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4e81321728ae8c41f7fb149f4d3fb6d0
https://europepmc.org/articles/PMC9363021/
https://europepmc.org/articles/PMC9363021/
Publikováno v:
Biophotonics Congress: Biomedical Optics 2022 (Translational, Microscopy, OCT, OTS, BRAIN).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb7a89acc85a46c1de0381619cb9abec
https://doi.org/10.1364/brain.2022.bw1c.3
https://doi.org/10.1364/brain.2022.bw1c.3