Zobrazeno 1 - 10
of 11
pro vyhledávání: '"SON HA TRAN"'
Publikováno v:
Indian Journal of Animal Sciences, Vol 94, Iss 4 (2024)
The research aimed to assess how feeding conditions and the number of the dominant follicles (DF) influence oestrus synchronization in swamp buffaloes. A total of 170 swamp female buffaloes raised in semi-grazing and housekeeping were included in the
Externí odkaz:
https://doaj.org/article/92b460903db04c66ba6a9146d16f627d
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
Abstract Experimental investigations on the effects of load sequence on degradations of bond-wire contacts of Insulated Gate Bipolar Transistors power modules are reported in this paper. Both the junction temperature swing ( $$\Delta T_{j}$$ Δ T j )
Externí odkaz:
https://doaj.org/article/5321eb1bf0a3412dbb3da87d8718420b
Autor:
Zoubir Khatir, Ali Ibrahim, Son-Ha Tran, Richard Lallemand, Stefan Mollov, Jean-Pierre Ousten, Jeffrey Ewanchuk
Publikováno v:
IEEE Transactions on Power Electronics. 34:2171-2180
The study of the impact of junction temperature swings (Δ Tj ) on degradation mechanisms during power cycling tests (PCTs) requires both a control of the applied thermal stress and a separation of degradation modes. The first requirement can be obta
Publikováno v:
Scientific Reports
Scientific Reports, Nature Publishing Group, 2021, 11, pp.5601. ⟨10.1038/s41598-021-84976-2⟩
Scientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
Scientific Reports, Nature Publishing Group, 2021, 11, pp.5601. ⟨10.1038/s41598-021-84976-2⟩
Scientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
Experimental investigations on the effects of load sequence on degradations of bond-wire contacts of Insulated Gate Bipolar Transistors power modules are reported in this paper. Both the junction temperature swing ($$\Delta T_{j}$$ Δ T j ) and the h
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Nausicaa Dornic, Son Ha Tran, Richard Lallemand, Ali Ibrahim, Zoubir Khatir, Jean-Pierre Ousten, Stefan Mollov, Jeffrey Ewanchuk
Publikováno v:
IEEE Journal of Emerging and Selected Topics in Power Electronics
IEEE Journal of Emerging and Selected Topics in Power Electronics, Institute of Electrical and Electronics Engineers, 2019, 8 p. ⟨10.1109/JESTPE.2019.2918941⟩
IEEE Journal of Emerging and Selected Topics in Power Electronics, Institute of Electrical and Electronics Engineers, 2019, 8 p. ⟨10.1109/JESTPE.2019.2918941⟩
In this paper, a lifetime model for bond wire contacts of insulated gate bipolar transistors (IGBT) power modules is reported. This model is based on power cycling tests obtained under accelerated conditions, and a finite-element model taking into ac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::61f7977e47c6c04fafbdb463e7c0ea15
https://hal.archives-ouvertes.fr/hal-02186162
https://hal.archives-ouvertes.fr/hal-02186162
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Ali Ibrahim, Zoubir Khatir, Nausicaa Dornic, Stefan Mollov, Jean-Pierre Ousten, Jeffrey Ewanchuk, Son-Ha Tran
Publikováno v:
Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2018, 88, p. 462-469. ⟨10.1016/j.microrel.2018.07.041⟩
Microelectronics Reliability, Elsevier, 2018, 88, p. 462-469. ⟨10.1016/j.microrel.2018.07.041⟩
29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2018, AALBORG, DANEMARK, 01-/10/2018 - 05/10/2018; This paper presents an experimental technique to characterize the damage evolution of the topside inter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e61e9ff16b550871340d77f1eef396ab
https://hal.archives-ouvertes.fr/hal-02090201/file/tex00000768.pdf
https://hal.archives-ouvertes.fr/hal-02090201/file/tex00000768.pdf
Publikováno v:
ESREF-25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
ESREF-25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Sep 2014, BERLIN, Germany. pp.PP.1921-1926, ⟨10.1016/j.microrel.2014.07.152⟩
ESREF-25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Sep 2014, BERLIN, Germany. pp.PP.1921-1926, ⟨10.1016/j.microrel.2014.07.152⟩
ESREF-25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, BERLIN, ALLEMAGNE, 29-/09/2014 - 02/10/2014; This research aims to enhance the understanding on position and size effects on the electro thermal behaviour
Publikováno v:
IEEE Transactions on Components, Packaging and Manufacturing Technology
IEEE Transactions on Components, Packaging and Manufacturing Technology, Institute of Electrical and Electronics Engineers, 2017, ⟨10.1109/TCPMT.2016.2633582⟩
IEEE Transactions on Components, Packaging and Manufacturing Technology, Institute of Electrical and Electronics Engineers, 2017, ⟨10.1109/TCPMT.2016.2633582⟩
Solder void thermal effects on power module performance and reliability were investigated a long time ago. The final goal is to determine void acceptability criteria or to remove them. Our approach is not to offer a more efficient method for neglecti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d1f2f103ad60743eef921446f62fa937
https://hal.archives-ouvertes.fr/hal-01466016/file/doc00026400.pdf
https://hal.archives-ouvertes.fr/hal-01466016/file/doc00026400.pdf