Engineering of the spin on dopant process on silicon on insulator substrate

Autor: Erfan Mafakheri, Giulio Tavani, Alexey Fedorov, Michele Perego, Mario Lodari, Andrea Barzaghi, Daniel Chrastina, Chiara Barri, Elisa Arduca, Francesco Scotognella, Luca Fagiani, Marco Abbarchi, Jacopo Frigerio, Monica Bollani

Publikováno v: Nanotechnology, 32(2)
Nanotechnology
Nanotechnology (Bristol, Online) (2021). doi:10.1088/1361-6528/abbdda
info:cnr-pdr/source/autori:Chiara Barri, Erfan Mafakheri, Luca Fagiani, Giulio Tavani, Andrea Barzaghi, Daniel Chrastina, Alexey Fedorov, Jacopo Frigerio, Mario Lodari, Francesco Scotognella, Elisa Arduca, Marco Abbarchi, Michele Perego, Monica Bollani/titolo:Engineering of the spin on dopant process on silicon on insulator substrate/doi:10.1088%2F1361-6528%2Fabbdda/rivista:Nanotechnology (Bristol, Online)/anno:2021/pagina_da:/pagina_a:/intervallo_pagine:/volume
Nanotechnology, 2020, 32 (2), pp.025303

We report on a systematic analysis of phosphorus diffusion in silicon on insulator thin film via spin-on-dopant process (SOD). This method is used to provide an impurity source for semiconductor junction fabrication. The dopant is first spread into t

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