Zobrazeno 1 - 10
of 10 145
pro vyhledávání: '"SINGLE electron transistors"'
Autor:
Chen, Kuan-Chu, Godfrin, Clement, Simion, George, Fattal, Imri, Kubicek, Stefan, Beyne, Sofie, Raes, Bart, Loenders, Arne, Kao, Kuo-Hsing, Wan, Danny, De Greve, Kristiaan
The spatial distribution of spurious dots in SiMOS single-electron transistors (SETs), fabricated on an industrial 300 mm process line, has been statistically analyzed. To have a deeper understanding of the origin of these spurious dots, we analyzed
Externí odkaz:
http://arxiv.org/abs/2410.18546
Autor:
Rothstein, Alexander, Fischer, Ammon, Achtermann, Anthony, Icking, Eike, Hecker, Katrin, Banszerus, Luca, Otto, Martin, Trellenkamp, Stefan, Lentz, Florian, Watanabe, Kenji, Taniguchi, Takashi, Beschoten, Bernd, Dolleman, Robin J., Kennes, Dante M., Stampfer, Christoph
Twisted bilayer graphene (tBLG) near the magic angle is a unique platform where the combination of topology and strong correlations gives rise to exotic electronic phases. These phases are gate-tunable and related to the presence of flat electronic b
Externí odkaz:
http://arxiv.org/abs/2409.08154
Autor:
Rey, Laura Sobral, Ohnmacht, David Christian, Winkelmann, Clemens B., Siewert, Jens, Belzig, Wolfgang, Scheer, Elke
We study the interplay between Coulomb blockade and superconductivity in a tunable superconductor-superconductor-normal metal single-electron transistor. The device is realized by connecting the superconducting island via an oxide barrier to the norm
Externí odkaz:
http://arxiv.org/abs/2306.05758
Autor:
Amar, Anuradha1 anuradhaamar654@gmail.com, Singh, Bipin Kumar2 profbipinsingh@gmail.com
Publikováno v:
Bulletin of Pure & Applied Sciences-Physics. Jan-Jun2021, Vol. 40D Issue 1, p63-68. 6p.
Autor:
Mizokuchi, Raisei1, Bugu, Sinan1, Hirayama, Masaru1, Yoneda, Jun2, Kodera, Tetsuo1 kodera.t.ac@m.titech.ac.jp
Publikováno v:
Scientific Reports. 3/12/2021, Vol. 11 Issue 1, p1-7. 7p.
Akademický článek
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Autor:
Tanamoto, Tetsufumi, Ono, Keiji
Single-electron transistors (SETs) have been extensively used as charge sensors in many areas such as quantum computations. In general, the signals of SETs are smaller than those of complementary metal-oxide semiconductor (CMOS) devices, and many amp
Externí odkaz:
http://arxiv.org/abs/2108.10467
Akademický článek
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Autor:
Bauer, Alexander G., Sothmann, Björn
We investigate thermally-driven transport of heat and charge in a superconducting single-electron transistor by means of a real-time diagrammatic transport theory. Our theoretical approach allows us to account for strong Coulomb interactions and arbi
Externí odkaz:
http://arxiv.org/abs/2109.02330
We report on low-temperature noise measurements of a single electron transistor (SET) immersed in superfluid $^4$He. The device acts as a charge sensitive electrometer able to detect the fluctuations of charged defects in close proximity to the SET.
Externí odkaz:
http://arxiv.org/abs/2010.06675