FTIR and Raman study of rapid thermal annealing and oxidation effects on structural properties of silicon-rich Si x C 1-x thin films deposited by R.F co-sputtering

Autor: L. Nkhaili, Eric Tomasella, Abdel-ilah El Khalfi, E. Ech-chamikh, Y. Ijdiyaou, Abdelkader El Kissani, A. Essafti, Mustapha Azizan

Publikováno v: Vibrational Spectroscopy
Vibrational Spectroscopy, Elsevier, 2017, 89, pp.44-48. ⟨10.1016/j.vibspec.2016.12.004⟩
Vibrational Spectroscopy, 2017, 89, pp.44-48. ⟨10.1016/j.vibspec.2016.12.004⟩

International audience; Si-rich silicon carbide (SixC1-x) thin films have been deposited by Radio Frequency (RF) co-sputtering. These films were deposited from a composite target consisting of crystalline silicon fragments regularly distributed on th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::566ebdbf1ea727fff394d3c94d923783
https://hal.archives-ouvertes.fr/hal-01647753

Use of radio frequency power, silicon tetrafluoride and methane as parameters to tune structural properties of hydrogenated microcrystalline silicon carbon alloys

Autor: Erik Johnson, R. Ruggeri, S. Gaiaschi, Marie-Estelle Gueunier-Farret

Publikováno v: Journal of Physics D: Applied Physics
Journal of Physics D: Applied Physics, IOP Publishing, 2014, 47 (45), pp.455102. ⟨10.1088/0022-3727/47/45/455102⟩
Journal of Physics D: Applied Physics, 2014, 47 (45), pp.455102. ⟨10.1088/0022-3727/47/45/455102⟩
Journal of physics. D, Applied physics
47 (2014). doi:10.1088/0022-3727/47/45/455102
info:cnr-pdr/source/autori:Gaiaschi, Sofia; Ruggeri, Rosa; Gueunier-Farret, Marie Estelle; Johnson, Erik V./titolo:Use of radio frequency power, silicon tetrafuoride and methane as parameters to tune structural properties of hydrogenated microcrystalline silicon carbon alloys/doi:10.1088%2F0022-3727%2F47%2F45%2F455102/rivista:Journal of physics. D, Applied physics (Print)/anno:2014/pagina_da:/pagina_a:/intervallo_pagine:/volume:47

International audience; In the search for a material with electrical properties similar to those of amorphous silicon or amorphous silicon germanium, but stable under light soaking, hydrogenated microcrystalline silicon–carbon alloy (µc-Si1 − xC

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9a5b38de6c8aee75506c7fd3d1066dec
https://hal-supelec.archives-ouvertes.fr/hal-01104321

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Influence of the deposition parameters on the electronic and structural properties of pulsed laser ablation prepared Si1-xCx thin films

Autor: Sebastiano Trusso, B. Brendebach, E. Barletta, H. Modrow, Guglielmo Mondio, Fortunato Neri, Francesco Barreca, Enza Fazio

Publikováno v: Journal of vacuum science & technology. A. Vacuum, surfaces, and films 25 (2007): 117–125. doi:10.1116/1.2400685
info:cnr-pdr/source/autori:Neri F, Barreca F, Fazio E, Barletta E, Mondio G, Trusso S, Brendebach B, Modrow H/titolo:Influence of the deposition parameters on the electronic and structural properties of pulsed laser ablation prepared Si1-xCx thin films/doi:10.1116%2F1.2400685/rivista:Journal of vacuum science & technology. A. Vacuum, surfaces, and films/anno:2007/pagina_da:117/pagina_a:125/intervallo_pagine:117–125/volume:25

Si1−xCx thin films have been deposited by pulsed laser ablation of a polycrystalline silicon carbide target in vacuum. The influence of the deposition parameters on the optical and structural properties of the samples was investigated by means of F

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dd34505f8c0c2c72abf59b82021c19b8

Structural modification of laser annealed a-Si1-xCx : H films

Autor: Coscia, U, Ambrosone, G, Minarini, C, Parisi, V, Schutzmann, S, Tebano, A

Publikováno v: Applied surface science 252 (2006): 4493–4496.
info:cnr-pdr/source/autori:Coscia, U; Ambrosone, G; Minarini, C; Parisi, V; Schutzmann, S; Tebano, A/titolo:Structural modification of laser annealed a-Si1-xCx : H films/doi:/rivista:Applied surface science/anno:2006/pagina_da:4493/pagina_a:4496/intervallo_pagine:4493–4496/volume:252

Hydrogenated amorphous silicon carbon films, with relatively low hydrogen content and carbon fraction x, C/(C + Si), ranging from 0.20 to 0.57 have been deposited by RF-plasma enhanced chemical vapor deposition (PECVD) for excimer laser annealing exp

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::0624b16fa67b86b83d32a209ba8dc9db
https://publications.cnr.it/doc/855