(Invited) On the Modeling of the Charge Pumping Curves

Autor: Daniel Bauza

Publikováno v: ECS Transactions
ECS Transactions, Electrochemical Society, Inc., 2016, 72 (2), pp.207-222. ⟨10.1149/07202.0207ecst⟩
229th ECS Meetings: 7th Int. Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufaturing-and-Solid State Topics General Session
229th ECS Meetings: 7th Int. Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufaturing-and-Solid State Topics General Session, D. Misra, K. Sundaram, H. Iwai, T. Chikyo, Y. Obeng, Z. Chen, D. Bauza, O. Leonte and K. Shimanura, May 2016, San Diego, United States

The Charge Pumping (CP) technique has been used to characterize insulator semiconductor interface traps in numerous device types and in a wealth of situations [1]. A few years ago and for the first time, the three basic CP curves types recorded from

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c0755798cefb24652a5404005bfb7feb
https://hal.archives-ouvertes.fr/hal-02015172

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