Characterization of Si-SiO2 interface traps in p-metal-oxide-semiconductor structures with thin oxides by conductance technique.

Autor: Hung, K. K., Cheng, Y. C.

Publikováno v: Journal of Applied Physics. 11/15/1987, Vol. 62 Issue 10, p4204. 8p.

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(Invited) Charge Pumping and Si-SiO2 Interface Traps Electrical Characterization

Autor: D. Bauza

Publikováno v: ECS Transactions. 28:251-261

After recalling recent results obtained in the field of the electrical characterization of the Si-SiO2 interface traps in conventional MOS transistors and in MOSFET's having HfO2 as gate dielectric using the charge pumping (CP) technique, the paper f

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::82ea4dadcccde3a841c14eef529bb347
https://doi.org/10.1149/1.3372580

Electrical properties of Si–SiO2 interface traps and evolution with oxide thickness in MOSFET’s with oxides from 2.3 to 1.2 nm thick

Autor: D. Bauza

Publikováno v: Solid-State Electronics. 47:1677-1683

Recently, the extraction of interface trap densities in MOSFET’s with ultrathin oxides, down to 1.2 nm, has been reported [MRS 2002 Spring meeting, San Francisco, April 1–5, MRS Proceedings 706, 2002, p. 293; IEEE Electron Dev. Lett. 23 (2002) 65

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::18b32b62d012d9c14d44aea83da712ee
https://doi.org/10.1016/s0038-1101(03)00169-2

Comparison between Equilibrium Voltage Step and Charge Pumping Techniques for Characterizing near Si-SiO2 Interface Traps

Autor: Naima Guenifi, Daniel Bauza

Publikováno v: 225th ECS : Dielectrics for Nanosystems 6: Materials Science, Processing, Reliabilty and Manufacturing
225th ECS : Dielectrics for Nanosystems 6: Materials Science, Processing, Reliabilty and Manufacturing, D. Misra, Y. Obeng, T. Chikyow, H. Iwai, Z. Chen and D. Bauza, May 2014, Orlando, United States
ECS Transactions
ECS Transactions, Electrochemical Society, Inc., 2014, 61 (2), pp.195-202. ⟨10.1149/06102.0195ecst⟩

In conventional MOS structures, the interface region between silicon and its oxide contains defects which play an important role in the performance and reliability of the devices by acting as charge traps. Traps having response times greater than tha

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c85d9cbc6d8d43736e57139e8ae3fa57
https://hal.archives-ouvertes.fr/hal-02065959