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The role of SiC as a diffusion barrier in the formation of graphene on Si(111)

Autor: Frédéric Joucken, Cristiane Nascimento Santos, Trung T. Pham, Benoît Hackens, Jean-Pierre Raskin, Robert Sporken

Publikováno v: Diamond and Related Materials. 66:141-148

In this paper, we investigate the role of SiC as a diffusion barrier for Si in the formation of graphene on Si(111) via direct deposition of solid-state carbon atoms in ultra-high vacuum. Therefore, various thicknesses of the SiC layer preformed on t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3cf7c5d5e184757a0b5ff138d1efb2f6
https://doi.org/10.1016/j.diamond.2016.04.011

Metal organic vapor phase epitaxy growth of (Al)GaN heterostructures on SiC/Si(111) templates synthesized by topochemical method of atoms substitution

Autor: Rozhavskaya, Mariia M., Kukushkin, Sergey A., Osipov, Andrey V., Myasoedov, Alexandr V., Troshkov, Sergey I., Sorokin, Lev M., Brunkov, Pavel N., Baklanov, Alexandr V., Telyatnik, Rodion S., Juluri, Raghavendra R., Pedersen, Kjeld, Popok, Vladimir N.

Publikováno v: Rozhavskaia, M M, Kukushkin, S A, Osipov, A, Myasoedov, A V, Troshkov, S I, Sorokin, L M, Brunkov, P N, Baklanov, A V, Telyatnik, R S, Juluri, R R, Pedersen, K & Popok, V 2017, ' Metal organic vapor phase epitaxy growth of (Al)GaN heterostructures on SiC/Si(111) templates synthesized by topochemical method of atoms substitution ', Physica Status Solidi. A: Applications and Materials Science, vol. 214, no. 10, 1700190 . https://doi.org/10.1002/pssa.201700190
Rozhavskaya, M M, Kukushkin, S A, Osipov, A V, Myasoedov, A V, Troshkov, S I, Sorokin, L M, Brunkov, P N, Baklanov, A V, Telyatnik, R S, Juluri, R R, Pedersen, K & Popok, V N 2017, ' Metal organic vapor phase epitaxy growth of (Al)GaN heterostructures on SiC/Si(111) templates synthesized by topochemical method of atoms substitution ', Physica Status Solidi. A: Applications and Materials Science (Online), vol. 214, no. 10, 1700190 . https://doi.org/10.1002/pssa.201700190

We report a novel approach for metal organic vapor phase epitaxy of (Al)GaN heterostructures on Si substrates. An approximately 90-100nm thick SiC buffer layer is synthesized using the reaction between Si substrate and CO gas. High-resolution transmi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::53c785bf41330a366da30fc75a9bc979
https://vbn.aau.dk/da/publications/58af732f-b852-4c93-8530-810868c438cc