Zobrazeno 1 - 10
of 5 884
pro vyhledávání: '"SHEIKH, Z. A."'
Some III-V digital alloy avalanche photodiodes exhibit low excess noise. These alloys have low hole ionization coefficients due to presence of small 'minigaps', enhanced effective mass and large separation between light-hole and split-off bands in th
Externí odkaz:
http://arxiv.org/abs/2111.04247
A series of III-V ternary and quarternary digital alloy avalanche photodiodes (APDs) have recently been seen to exhibit very low excess noise. Using band inversion of an environment-dependent atomistic tight binding description of short period superl
Externí odkaz:
http://arxiv.org/abs/2109.01995
Autor:
Zheng, Jiyuan, Jones, Andrew H., Tan, Yaohua, Rockwell, Ann K., March, Stephen, Ahmed, Sheikh Z., Dukes, Catherine A., Ghosh, Avik W., Bank, Seth R., Campbell, Joe C.
Publikováno v:
Applied Physics Letters 115.12 (2019): 122105
The unprecedented wide bandgap tunability (~1 eV) of Al$_x$In$_{1-x}$As$_y$Sb$_{1-y}$ latticed-matched to GaSb enables the fabrication of photodetectors over a wide range from near-infrared to mid-infrared. In this paper, the valence band-offsets in
Externí odkaz:
http://arxiv.org/abs/2105.13187
Autor:
Zheng, Jiyuan, Ahmed, Sheikh Z., Yuan, Yuan, Jones, Andrew, Tan, Yaohua, Rockwell, Ann K., March, Stephen D., Bank, Seth R., Ghosh, Avik W., Campbell, Joe C.
Publikováno v:
InfoMat 2.6 (2020): 1236-1240
Avalanche photodiodes fabricated from AlInAsSb grown as a digital alloy exhibit low excess noise. In this paper, we investigate the band structure-related mechanisms that influence impact ionization. Band-structures calculated using an empirical tigh
Externí odkaz:
http://arxiv.org/abs/2105.13176
Autor:
Ahmed, Sheikh Z., Ganguly, Samiran, Yuan, Yuan, Zheng, Jiyuan, Tan, Yaohua, Campbell, Joe C., Ghosh, Avik W.
III-V material based digital alloy Avalanche Photodiodes (APDs) have recently been found to exhibit low noise similar to Silicon APDs. The III-V materials can be chosen to operate at any wavelength in the infrared spectrum. In this work, we present a
Externí odkaz:
http://arxiv.org/abs/2102.04647
We present a quasi-analytical model for Tunnel Field Effect Transistors (TFETs) that includes the microscopic physics and chemistry of interfaces and non-idealities. The ballistic band-to-band tunneling current is calculated by modifying the well kno
Externí odkaz:
http://arxiv.org/abs/1806.06331
Autor:
Banday, Saquib Z., Ayub, Maniza, Rasool, Malik T., Ahmed, Sheikh Z., Banday, Aaqib Z., Naveed, Shah, Guru, Faisal R., Mir, Mohmad H., Akhter, Shareefa, Bhat, Mudasir H., Yaseen, Syed B., Afroz, Fir, Bhat, Gull M., Lone, Mohammad M., Aziz, Shiekh A.
Publikováno v:
Journal of Cancer Research & Therapeutics; Jul-Sep2024, Vol. 20 Issue 5, p1486-1493, 8p
Publikováno v:
In Burns May 2021 47(3):576-586
Publikováno v:
In Solid State Electronics July 2020 169
Autor:
Jiyuan Zheng, Sheikh Z. Ahmed, Yuan Yuan, Andrew Jones, Yaohua Tan, Ann K. Rockwell, Stephen D. March, Seth R. Bank, Avik W. Ghosh, Joe C. Campbell
Publikováno v:
InfoMat, Vol 2, Iss 6, Pp 1236-1240 (2020)
Abstract Avalanche photodiodes fabricated from AlInAsSb grown as a digital alloy exhibit low excess noise. In this article, we investigate the band structure‐related mechanisms that influence impact ionization. Band‐structures calculated using an
Externí odkaz:
https://doaj.org/article/c8188819b1704daab3264a30ecd836ca