Zobrazeno 1 - 10
of 98
pro vyhledávání: '"SHARAN, Abhishek"'
Two-dimensional Ferrovalley materials with intrinsic valley polarization are rare but highly promising for valley-based nonvolatile random access memory and valley filter. Using Kinetically Limited Minimization (KLM), an unconstrained crystal structu
Externí odkaz:
http://arxiv.org/abs/2206.14626
Autor:
Sharan, Abhishek, de Lima, Felipe Crasto, Khalid, Shoaib, Miwa, Roberto H., Janotti, Anderson
Using first-principles electronic structure calculations, we show that ferromagnetic Heusler compounds Co$_2$MnX (X= Si, Ge, Sn) present non-trivial topological characteristics and belong to the category of Weyl semimetals. These materials exhibit tw
Externí odkaz:
http://arxiv.org/abs/2111.14135
Autor:
Sharan, Abhishek, Nara, Seema
Publikováno v:
In Biocatalysis and Agricultural Biotechnology April 2024 57
Autor:
Tsiotsias, Anastasios I., Charisiou, Nikolaos D., Italiano, Cristina, Ferrante, Giovanni D., Pino, Lidia, Vita, Antonio, Sebastian, Victor, Hinder, Steven J., Baker, Mark A., Sharan, Abhishek, Singh, Nirpendra, Polychronopoulou, Kyriaki, Goula, Maria A.
Publikováno v:
In Applied Surface Science 15 February 2024 646
Autor:
Shourov, Estiaque H., Strohbeen, Patrick J., Du, Dongxue, Sharan, Abhishek, de Lima, Felipe C., Rodolakis, Fanny, McChesney, Jessica, Yannello, Vincent, Janotti, Anderson, Birol, Turan, Kawasaki, Jason K.
Publikováno v:
Phys. Rev. B 103, 045134 (2021)
Electronic correlations are crucial to the low energy physics of metallic systems with localized $d$ and $f$ states; however, their effect on band insulators and semiconductors is typically negligible. Here, we measure the electronic structure of the
Externí odkaz:
http://arxiv.org/abs/2009.11489
Publikováno v:
Phys. Rev. B 101, 125105 (2020)
The structural parameters and electronic structure of rare-earth pnictides are calculated using density functional theory (DFT) with the Heyd, Scuseria, and Ernzerhof (HSE06) screened hybrid functional. We focus on RE-V compounds, with RE=La, Gd, Er,
Externí odkaz:
http://arxiv.org/abs/1911.06184
Autor:
Rice, Anthony D., Sharan, Abhishek, Wilson, Nathaniel S., Harrington, Sean D., Pendharkar, Mihir, Janotti, Anderson, Palmstrøm, Chris J.
As progress is made on thin-film synthesis of Heusler compounds, a more complete understanding of the surface will be required to control their properties, especially as functional heterostructures are explored. Here, the surface reconstructions of s
Externí odkaz:
http://arxiv.org/abs/1909.12487
Autor:
Chatterjee, Shouvik, Khalid, Shoaib, Inbar, Hadass S., Goswami, Aranya, de Lima, Felipe Crasto, Sharan, Abhishek, Sabino, Fernando P., Brown-Heft, Tobias L., Chang, Yu-Hao, Fedorov, Alexei V., Read, Dan, Janotti, Anderson, Palmstrøm, Christopher J.
Publikováno v:
Phys. Rev. B 99, 125134 (2019)
Observation of large non-saturating magnetoresistance in rare-earth monopnictides has raised enormous interest in understanding the role of its electronic structure. Here, by a combination of molecular-beam epitaxy, low-temperature transport, angle-r
Externí odkaz:
http://arxiv.org/abs/1902.00048
Formation of two-dimensional electron and hole gases at the interface of half-Heusler semiconductors
Publikováno v:
Phys. Rev. Materials 3, 061602 (2019)
Heuslers are a prominent family of multi-functional materials that includes semiconductors, half metals, topological semimetals, and magnetic superconductors. Owing to their same crystalline structure, yet quite different electronic properties and fl
Externí odkaz:
http://arxiv.org/abs/1812.05991
Autor:
Lokhande, Abhishek, Sharan, Abhishek, Nair, Surabhi Suresh, Shelke, Abhijeet, Karade, Vijay, Kim, Jin Hyeok, Singh, Nirpendra, Choi, Daniel
Publikováno v:
In Journal of Energy Storage 30 November 2022 55 Part D