Zobrazeno 1 - 10
of 10
pro vyhledávání: '"SEUNGMOO LEE"'
Publikováno v:
Thin Solid Films. 663:21-24
Amorphous carbon layer (ACL) deposited by the capacitively coupled plasma (CCP), plasma-enhanced chemical vapor deposition (PE-CVD) is widely used in etching hard masks in the semiconductor industry. As the feature size of semiconductor devices decre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::811cd9d1bb356e7f79589ce45bd58eb8
https://doi.org/10.1016/j.tsf.2018.08.007
https://doi.org/10.1016/j.tsf.2018.08.007
Publikováno v:
RSC Advances. 8:11207-11215
We synthesized a series of double perovskite Eu3+-activated Gd2ZnTiO6 red-emitting phosphors by a solid-state reaction route and analyzed their morphology, crystallinity, luminescent properties, and thermal stability. Under 270 nm of excitation, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7005e8cdfe9e94f7476c0c293b2955e
https://doi.org/10.1039/c8ra00700d
https://doi.org/10.1039/c8ra00700d
Publikováno v:
RSC advances. 8(20)
We synthesized a series of double perovskite Eu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::28ea1f89ced96f1d5111cf30aa9c073f
https://pubmed.ncbi.nlm.nih.gov/35541549
https://pubmed.ncbi.nlm.nih.gov/35541549
Autor:
Seungmoon Choi, Seungmoo Lee, Seulki Min, Gerard Jounghyun Kim, Chungyean Cho, Jaedong Lee, Seoyeon Jung, Dooyoung Jung, Chul Hyun Cho, Sungho Seo, Youngil Lee, Eunbi Seol
Publikováno v:
VRST
In this paper, we present a virtual reality based content/system called the "Drop the beat" designed to help the mindfulness and train one to overcome panic disorder. The two main elements of the proposed system are the (1) use of 360-degree video fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f5c303416d80fa74a18fb85e2b3d7a5
https://doi.org/10.1145/3139131.3141199
https://doi.org/10.1145/3139131.3141199
Autor:
Jaihyung Won, Dongjin Byun, Jong-Sik Choi, Yeonhong Jee, Seungmoo Lee, Samseok Jang, Hyeon-deok Lee
Publikováno v:
Thin Solid Films. 519:6737-6740
Amorphous carbon layers (ACL) were deposited on Si (100) wafers by plasma enhanced chemical vapor deposition (PECVD) by using 1-hexene (C 6 H 12 ) as a carbon source for dry etch hard mask of semiconductor devices manufacturing process. The depositio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe56f0bda934c70f308ebd226dadcf68
https://doi.org/10.1016/j.tsf.2011.01.405
https://doi.org/10.1016/j.tsf.2011.01.405
Autor:
Yeonhong Jee, Ji Hun Park, Hyeon-deok Lee, Jong-Sik Choi, Dongjin Byun, Seungmoo Lee, Jaihyung Won
Publikováno v:
Thin Solid Films. 519:6683-6687
Amorphous carbon layers (ACLs) were prepared by plasma enhanced chemical vapor deposition (PECVD) from 1-hexene (C6H12) and propylene (C3H6) as a carbon source at different temperatures for dry etch hard mask of semiconductor devices manufacturing pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61e05bf403f773502f7d960515d7f9cc
https://doi.org/10.1016/j.tsf.2011.04.077
https://doi.org/10.1016/j.tsf.2011.04.077
Autor:
Seungmoo Lee, Bum-Joon Kim, Jong Mun Choi, Dongjin Byun, Seong Eon Jin, Tack Mo Chung, Chang Gyoun Kim, Do-Han Lee
Publikováno v:
Surface Review and Letters. 17:307-310
Cu seed layer was deposited by chemical vapor deposition using new Cu precursor, Cu(dmamb) 2. The Cu layers still need the barrier layer to prevent the diffusion, so Ta and Ti were used for the barrier layer on Si(100) . Low temperature (LT) copper b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50e28a18df5a9b0b7b95c761e57eb1cd
https://doi.org/10.1142/s0218625x10013801
https://doi.org/10.1142/s0218625x10013801
Autor:
SEONG-EON JIN, DOHAN LEE, SEUNGMOO LEE, JONG-MUN CHOI, BUMJOON KIM, CHANG GYOUN KIM, TACK-MO CHUNG, DONG-JIN BYUN
Publikováno v:
Surface Review and Letters. 17(03):307-310
Cu seed layer was deposited by chemical vapor deposition using new Cu precursor, Cu(dmamb)2. The Cu layers still need the barrier layer to prevent the diffusion, so Ta and Ti were used for the barrier layer on Si(100). Low temperature (LT) copper buf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______645::f43c8e498c26231d7fa03ec14f372ab6
http://www.worldscinet.com/cgi-bin/details.cgi?type=html&id=pii:S0218625X10013801
http://www.worldscinet.com/cgi-bin/details.cgi?type=html&id=pii:S0218625X10013801
Autor:
Ho-Kyu Kang, Hayoung Yi, Hong-Gun Kim, Yong-Soon Choi, Seok-Woo Nam, Young-Ho Koh, Mansug Kang, ByeongJu Bae, Namjin Cho, Seung-Heon Lee, Jinhyung Park, Chilhee Chung, Jun-Won Lee, Eunkee Hong, Seungmoo Lee
Publikováno v:
2012 IEEE International Interconnect Technology Conference.
Flowable CVD (Chemical Vapor Deposition) process having merits in terms of both superior gap-fill performance of SOD (Spin-on Dielectric) and process stability of CVD was introduced for the interlayer dielectric (ILD) in sub-20nm devices based on new
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21e1490a594a3b398e8fd3f13e01c293
https://doi.org/10.1109/iitc.2012.6251590
https://doi.org/10.1109/iitc.2012.6251590
Autor:
K.-W. Lee, Kang-Wook Park, Won Ji Park, Young-Jin Wee, S. W. Nam, H. K. Kang, Kang-Deog Suh, Young-Joon Moon, I.G. Kim, Jae-Chul Kim, Seungmoo Lee, Hyun-Eok Shin, J.W. Hwang
Publikováno v:
Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729).
A manufacturable Cu/low-k multilevel interconnects have been integrated using HSQ-via-fill dual damascene process for 65nm node as stated in K.-W. Lee et al. (2003). By introducing non-porous type SiOC film (k=2.7) without trench etch stopper and cap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85f86d9fa2649cfe83611dd9446da0c3
https://doi.org/10.1109/iitc.2004.1345683
https://doi.org/10.1109/iitc.2004.1345683