SIMULATION OF HYDROGENATED SILICON ION CLUSTER FORMATION DURING PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION.

Autor: STEKOLNIKOV, A. F., FESHCHENKO, D. V., IVANOV, O. M., SERGEANTOV, A. S.

Publikováno v: Physics, Chemistry & Application of Nanostructures: Reviews & Short Notes To Nanomeeting '99; 1999, p255-258, 4p