Zobrazeno 1 - 10
of 70
pro vyhledávání: '"SEREF KALEM"'
Autor:
Seref Kalem
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-9 (2024)
Abstract The silicon suboxide SiOx (x
Externí odkaz:
https://doaj.org/article/b26dd565e88148248f96dcbcf17044e0
Autor:
Seref Kalem
Publikováno v:
IEEE Open Journal of Nanotechnology, Vol 1, Pp 88-94 (2020)
We report an efficient room temperature photon source at 1320 nm telecommunication wavelength from nanostructured silicon surface. The activation of this light source was realized by treating the surface of Si wafer by vapor of heavy water (D2O) cont
Externí odkaz:
https://doaj.org/article/88d2f2cdf4cc41839d299104f2cf71bd
Autor:
Seref Kalem
Publikováno v:
Oxide-based Materials and Devices XIV.
Autor:
Seref Kalem
Publikováno v:
Journal of Materials Science: Materials in Electronics. 34
Autor:
Seref Kalem, Serdar B. Tekin, Zahit E. Kaya, Eric Jalaguier, Robin Roelofs, Saffet Yildirim, Ozgur Yavuzcetin, Christian Wenger
Publikováno v:
Materials Science in Semiconductor Processing. 158:107346
Autor:
Seref Kalem
Publikováno v:
Oxide-based Materials and Devices XIII.
Surface functionalization of silicon wafers using nanoscale fabrication techniques has attracted a great deal of interest for its promising photonic applications ranging from energy harvesting to sensing and imaging. The surfaces so produced offer al
Autor:
Seref Kalem
Publikováno v:
Volume: 37, Issue: 3 275-282
Turkish Journal of Physics
Turkish Journal of Physics
Raman light scattering, low-temperature photoluminescence, light-scattering tomography, and hydrogenation were used to investigate optical properties of defects in strain-relaxed Si1-xGex (0.05 \le x \le 0.50) alloys. The photoluminescence emission w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6db6e0b2b8ec67b5eb7b5017f55f2dd4
http://arxiv.org/abs/2110.04351
http://arxiv.org/abs/2110.04351
Autor:
SEREF KALEM
Publikováno v:
SEREF KALEM
This paper presents recent progress in resistive oxide memories and their integration into advanced embedded nonvolatile memory technology nodes. With the downscaling trends in emerging semiconductor manufacturing and novel user needs such as higher
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::75b9d5f3c8e5daed64f62d0b0e7f8ff7
https://zenodo.org/record/6660572
https://zenodo.org/record/6660572
Autor:
Zahit Evren Kaya, Christian Wenger, Ozgur Yavuzcetin, Seref Kalem, Saffet Yildirim, S.B. Tekin, Robin Roelofs, Eric Jalaguier
Publikováno v:
Oxide-based Materials and Devices XII.
This paper presents recent progress in resistive oxide memories and their integration into advanced embedded nonvolatile memory technology nodes. With the downscaling trends in emerging semiconductor manufacturing and novel user needs such as higher
The evolution is presented of infrared transmission spectra of hydrogenated and chlorinated amorphous silicon films versus the chlorine concentration and the annealing temperature. As the chlorine content increases, an increase of the 2100 cm-1 band
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8ce4e9e868c421341a7a70d0672442ac