Zobrazeno 1 - 2
of 2
pro vyhledávání: '"SEONG-EON JIN"'
Autor:
Seungmoo Lee, Bum-Joon Kim, Jong Mun Choi, Dongjin Byun, Seong Eon Jin, Tack Mo Chung, Chang Gyoun Kim, Do-Han Lee
Publikováno v:
Surface Review and Letters. 17:307-310
Cu seed layer was deposited by chemical vapor deposition using new Cu precursor, Cu(dmamb) 2. The Cu layers still need the barrier layer to prevent the diffusion, so Ta and Ti were used for the barrier layer on Si(100) . Low temperature (LT) copper b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50e28a18df5a9b0b7b95c761e57eb1cd
https://doi.org/10.1142/s0218625x10013801
https://doi.org/10.1142/s0218625x10013801
Autor:
SEONG-EON JIN, DOHAN LEE, SEUNGMOO LEE, JONG-MUN CHOI, BUMJOON KIM, CHANG GYOUN KIM, TACK-MO CHUNG, DONG-JIN BYUN
Publikováno v:
Surface Review and Letters. 17(03):307-310
Cu seed layer was deposited by chemical vapor deposition using new Cu precursor, Cu(dmamb)2. The Cu layers still need the barrier layer to prevent the diffusion, so Ta and Ti were used for the barrier layer on Si(100). Low temperature (LT) copper buf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______645::f43c8e498c26231d7fa03ec14f372ab6
http://www.worldscinet.com/cgi-bin/details.cgi?type=html&id=pii:S0218625X10013801
http://www.worldscinet.com/cgi-bin/details.cgi?type=html&id=pii:S0218625X10013801