Zobrazeno 1 - 10
of 165
pro vyhledávání: '"SEOK JOON YUN"'
Autor:
Marti Checa, Addis S. Fuhr, Changhyo Sun, Rama Vasudevan, Maxim Ziatdinov, Ilia Ivanov, Seok Joon Yun, Kai Xiao, Alp Sehirlioglu, Yunseok Kim, Pankaj Sharma, Kyle P. Kelley, Neus Domingo, Stephen Jesse, Liam Collins
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-12 (2023)
Abstract Unraveling local dynamic charge processes is vital for progress in diverse fields, from microelectronics to energy storage. This relies on the ability to map charge carrier motion across multiple length- and timescales and understanding how
Externí odkaz:
https://doaj.org/article/f94c5350d15f4e1cb06d448ce809943d
Autor:
Riya Sebait, Roberto Rosati, Seok Joon Yun, Krishna P. Dhakal, Samuel Brem, Chandan Biswas, Alexander Puretzky, Ermin Malic, Young Hee Lee
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-9 (2023)
Abstract We report the emergence of dark-excitons in transition-metal-dichalcogenide (TMD) heterostructures that strongly rely on the stacking sequence, i.e., momentum-dark K-Q exciton located exclusively at the top layer of the heterostructure. The
Externí odkaz:
https://doaj.org/article/b4711f52bbe341899217fac3d920a8a6
Autor:
Chanwoo Lee, Byeong Geun Jeong, Sung Hyuk Kim, Dong Hyeon Kim, Seok Joon Yun, Wooseon Choi, Sung-Jin An, Dongki Lee, Young-Min Kim, Ki Kang Kim, Seung Mi Lee, Mun Seok Jeong
Publikováno v:
npj 2D Materials and Applications, Vol 6, Iss 1, Pp 1-9 (2022)
Abstract Nanoscale defects in two-dimensional (2D) transition metal dichalcogenides (TMDs) alter their intrinsic optical and electronic properties, and such defects require investigation. Atomic-resolution techniques such as transmission electron mic
Externí odkaz:
https://doaj.org/article/192d1b4a7e7647f1855bfe5e3672e100
Autor:
Soo Ho Choi, Seok Joon Yun, Yo Seob Won, Chang Seok Oh, Soo Min Kim, Ki Kang Kim, Young Hee Lee
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-5 (2022)
The industrial application of two-dimensional (2D) materials strongly depends on the large-scale manufacturing of high-quality 2D films and powders. Here, the authors analyze three state-of-the art mass production techniques, discussing the recent pr
Externí odkaz:
https://doaj.org/article/13deba8b919945529d3426f8679d5776
Autor:
Sunil Kumar, Arvind Singh, Anand Nivedan, Sandeep Kumar, Seok Joon Yun, Young Hee Lee, Marc Tondusson, Jérôme Degert, Jean Oberle, Eric Freysz
Publikováno v:
Nano Select, Vol 2, Iss 10, Pp 2019-2028 (2021)
Abstract Monolayers of transition metal dichalcogenides are semiconducting materials which offer many prospects in optoelectronics. A monolayer of molybdenum disulfide (MoS2) has a direct bandgap of 1.88 eV. Hence, when excited with optical photon en
Externí odkaz:
https://doaj.org/article/b2a2bdb9c7a74cadacc53caa16c732a0
Autor:
Sang‐Hyeok Yang, Wooseon Choi, Byeong Wook Cho, Frederick Osei‐Tutu Agyapong‐Fordjour, Sehwan Park, Seok Joon Yun, Hyung‐Jin Kim, Young‐Kyu Han, Young Hee Lee, Ki Kang Kim, Young‐Min Kim
Publikováno v:
Advanced Science, Vol 8, Iss 16, Pp n/a-n/a (2021)
Abstract Atomic dopants and defects play a crucial role in creating new functionalities in 2D transition metal dichalcogenides (2D TMDs). Therefore, atomic‐scale identification and their quantification warrant precise engineering that widens their
Externí odkaz:
https://doaj.org/article/6003e2c1bc4b4a29918a9debd16cdd7e
Autor:
Frederick Osei‐Tutu Agyapong‐Fordjour, Seok Joon Yun, Hyung‐Jin Kim, Wooseon Choi, Balakrishnan Kirubasankar, Soo Ho Choi, Laud Anim Adofo, Stephen Boandoh, Yong In Kim, Soo Min Kim, Young‐Min Kim, Young Hee Lee, Young‐Kyu Han, Ki Kang Kim
Publikováno v:
Advanced Science, Vol 8, Iss 16, Pp n/a-n/a (2021)
Abstract Among transition metal dichalcogenides (TMdCs) as alternatives for Pt‐based catalysts, metallic‐TMdCs catalysts have highly reactive basal‐plane but are unstable. Meanwhile, chemically stable semiconducting‐TMdCs show limiting cataly
Externí odkaz:
https://doaj.org/article/fee52419c95d4627b64b9a5b5be33b9b
Autor:
Wujoon Cha, Chaejeong Heo, Sanghyub Lee, Seok Joon Yun, Byeong Wook Cho, Taewoo Ha, Young Hee Lee
Publikováno v:
ACS Nano. 17:4834-4842
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::681b1d0d49396cb6fd323949087a032c
https://doi.org/10.1021/acsnano.2c11428
https://doi.org/10.1021/acsnano.2c11428
Autor:
Subash Adhikari, Ji‐Hee Kim, Bumsub Song, Manh‐Ha Doan, Minh Dao Tran, Leyre Gomez, Hyun Kim, Hamza Zad Gul, Ganesh Ghimire, Seok Joon Yun, Tom Gregorkiewicz, Young Hee Lee
Publikováno v:
Advanced Materials Interfaces, Vol 7, Iss 21, Pp n/a-n/a (2020)
Abstract Many‐body effect and strong Coulomb interaction in monolayer transition metal dichalcogenides lead to intrinsic bandgap shrinking, originating from the renormalization of electrical/optical bandgap, exciton binding energy, and spin‐orbit
Externí odkaz:
https://doaj.org/article/78b976ca82384bbf99253b88316eca5a
Autor:
Seok Joon Yun, Dinh Loc Duong, Doan Manh Ha, Kirandeep Singh, Thanh Luan Phan, Wooseon Choi, Young‐Min Kim, Young Hee Lee
Publikováno v:
Advanced Science, Vol 7, Iss 9, Pp n/a-n/a (2020)
Abstract Diluted magnetic semiconductors including Mn‐doped GaAs are attractive for gate‐controlled spintronics but Curie transition at room temperature with long‐range ferromagnetic order is still debatable to date. Here, the room‐temperatur
Externí odkaz:
https://doaj.org/article/e07c7379149d4e2689adb09e853b1cc3