Zobrazeno 1 - 10
of 773
pro vyhledávání: '"SEMOND F"'
Autor:
Souissi, H, Gromovyi, M, Gueye, T, Brimont, C, Doyennette, L, Solnyshkov, D, Malpuech, G, Cambril, E, Bouchoule, S, Alloing, B, Rennesson, S, Semond, F, Zúñiga-Pérez, J, Guillet, T
Publikováno v:
Physical Review Applied 18, 044029 (2022)
We experimentally demonstrate the difference between a ridge polariton laser, and a conventional edge-emitting ridge laser operating under electron-hole population inversion. The horizontal laser cavities are 20 -- 60 $\mu$m long GaN etched ridge str
Externí odkaz:
http://arxiv.org/abs/2201.04348
Publikováno v:
Journal of the European Optical Society-Rapid Publications, Vol 9, p 14050 (2014)
In this work, we present the fabrication and the characterization of an optical waveguide made of AlN and GaN layers grown by MBE on a Si(111) substrate. For the fundamental mode at 633 nm, the propagation losses are in the order of 2 dB/cm, which is
Externí odkaz:
https://doaj.org/article/2cc633e9961f4d1b805494a4c2c42bcf
Autor:
Brimont, C., Doyennette, L., Kreyder, G., Réveret, F., Disseix, P., Médard, F., Leymarie, J., Cambril, E., Bouchoule, S., Gromovyi, M., Alloing, B., Rennesson, S., Semond, F., Zúñiga-Pérez, J., Guillet, T.
Publikováno v:
Phys. Rev. Applied 14, 054060 (2020)
We investigate the demonstration and quantification of the strong coupling between excitons and guided photons in a GaN slab waveguide. The dispersions of waveguide polaritons are measured from T=6~K to 300~K through gratings. They are carefully anal
Externí odkaz:
http://arxiv.org/abs/2002.05066
Autor:
Mehta, J., Abid, I., Bassaler, J., Pernot, J., Ferrandis, P., Nemoz, M., Cordier, Y., Rennesson, S., Tamariz, S., Semond, F., Medjdoub, F.
Publikováno v:
In e-Prime - Advances in Electrical Engineering, Electronics and Energy March 2023 3
Autor:
Jamadi, O., Reveret, F., Solnyshkov, D., Disseix, P., Leymarie, J., Mallet-Dida, L., Brimont, C., Guillet, T., Lafosse, X., Bouchoule, S., Semond, F., Leroux, M., Zuniga-Perez, J., Malpuech, G.
Publikováno v:
Phys. Rev. B 99, 085304 (2019)
Planar microcavities filled with active materials containing excitonic resonances host radiative exciton-polariton (polariton) modes with in-plane wave vectors within the light cone. They also host at least one mode guided in the cavity plane by tota
Externí odkaz:
http://arxiv.org/abs/1810.05508
Autor:
Lucci, I., Charbonnier, S., Pedesseau, L., Vallet, M., Cerutti, L., Rodriguez, J. -B., Tournie, E., Bernard, R., Letoublon, A., Bertru, N., Corre, A. Le, Rennesson, S., Semond, F., Patriarche, G., Largeau, L., Turban, P., Ponchet, A., Cornet, C.
Publikováno v:
Phys. Rev. Materials 2, 060401 (2018)
Here, we experimentally and theoretically clarify III-V/Si crystal growth processes. Atomically-resolved microscopy shows that mono-domain 3D islands are observed at the early stages of AlSb, AlN and GaP epitaxy on Si, independently of misfit. It is
Externí odkaz:
http://arxiv.org/abs/1804.02358
Autor:
Nemoz, M., Semond, F., Rennesson, S., Leroux, M., Bouchoule, S., Patriarche, G., Zuniga-Perez, J.
Publikováno v:
In Superlattices and Microstructures February 2021 150
Autor:
Jamadi, O., Réveret, F., Mallet, E., Disseix, P., Médard, F., Mihailovic, M., Solnyshkov, D., Malpuech, G., Leymarie, J., Bouchoule, S., Lafosse, X., Li, F., Leroux, M., Semond, F., Zuniga-Perez, J.
Publikováno v:
Phys. Rev. B 93, 115205 (2016)
GaN and ZnO microcavities have been grown on patterned silicon substrate. Thanks to a common platform these microcavities share similar photonic properties with large quality factors and low photonic disorder which gives the possibility to determine
Externí odkaz:
http://arxiv.org/abs/1512.05985
Publikováno v:
Surface Science 541, 242 (2003)
The reconstructions of the Ga polarity GaN(0 0 0 1) surface with and without trace amounts of arsenic and prepared by molecular beam epitaxy (MBE) have been studied with in situ reflection high-energy electron diffraction (RHEED) and scanning tunneli
Externí odkaz:
http://arxiv.org/abs/1501.00143
Autor:
Zuniga-Perez, J., Mallet, E., Hahe, R., Rashid, M. J., Bouchoule, S., Brimont, C., Disseix, P., Duboz, J. Y., Gommé, G., Guillet, T., Jamadi, O., Lafosse, X., Leroux, M., Leymarie, J., Li, Feng, Réveret, F., Semond, F.
A new platform for fabricating polariton lasers operating at room temperature is introduced: nitride-based distributed Bragg reflectors epitaxially grown on patterned silicon substrates. The patterning allows for an enhanced strain relaxation thereby
Externí odkaz:
http://arxiv.org/abs/1404.7743