Zobrazeno 1 - 7
of 7
pro vyhledávání: '"SEMICONDUCTING TIN COMPOUNDS"'
Autor:
Amjad Al Taleb, Daniel Farías, Danil W. Boukhvalov, Valentina Paolucci, Francesca Genuzio, Carlo Cantalini, Tevfik Onur Menteş, Chin-Shan Lue, Gianluca D'Olimpio, Piero Torelli, Chia Nung Kuo, Andrea Locatelli, Antonio Politano
Publikováno v:
Journal of Physical Chemistry Letters
The Journal of Physical Chemistry Letters
The Journal of Physical Chemistry Letters
Tin diselenide (SnSe2) is a van der Waals semiconductor, which spontaneously forms a subnanometric SnO2 skin once exposed to air. Here, by means of surface-science spectroscopies and density functional theory, we have investigated the charge redistri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3cee730db5c1f8472159899f30891da6
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85094671576&doi=10.1021/acs.jpclett.0c02616&partnerID=40&md5=61bb998ef9ec9e13c7e212299fd95797
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85094671576&doi=10.1021/acs.jpclett.0c02616&partnerID=40&md5=61bb998ef9ec9e13c7e212299fd95797
Autor:
Anna Bonavita, Giovanni Neri, Yongxiang Li, Wojtek Wlodarski, Salvatore Leonardi, Nicola Donato
2D-SnS2 flakes were synthesized via a wet chemical route and deposited as a thin film onto the Pt-interdigitated contacts of a ceramic substrate with aim to fabricate a conductometric sensor. The 2D-SnS2 sensing film was then annealed “in situ” u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c4f336dce29ae225da6dcaad65588a46
http://hdl.handle.net/11570/3135404
http://hdl.handle.net/11570/3135404
Autor:
Jüri Krustok, Ian Forbes, M. V. Yakushev, O. M. Borodavchenko, V. D. Zhivulko, Robert W. Martin, J. Márquez-Prieto, M. A. Sulimov, M. V. Kuznetsov, A. V. Mudryi, Ekaterina Skidchenko, Paul R. Edwards
Publikováno v:
J. Vac. Sci. Technol. B. Nanotechnol. microelectron.
Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Cu2ZnSnSe4 (CZTSe) is a semiconductor used as the absorber layer in highly promising sustainable thin film solar cells. The authors study the effect of Ar+ etching of copper deficient and zinc excess CZTSe thin films deposited on Mo/glass substrates
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6ee1aa30be4b85488cd23ade90c0c61d
Autor:
C. Astaldi, Elisabetta Borsella, Rosanna Larciprete, C. Quaresima, Michele Zacchigna, P. De Padova, M. Matteucci, Carlo Ottaviani, C. Crotti, P. Perfetti, C. Comicioli, Kevin C. Prince
Publikováno v:
Applied surface science 104-105 (1996): 349–353. doi:10.1016/S0169-4332(96)00169-9
info:cnr-pdr/source/autori:P. De Padova, R. Larciprete, C. Ottaviani, C. Quaresima, P. Perfetti, E. Borsella, C. Astaldi, C. Comicioli, C. Crotti, M. Matteucci, M. Zacchigna, K. Prince/titolo:Synchrotron radiation photoelectron spectroscopy of the O(2s) core level as a tool for monitoring the reducing effects of ion bombardment on SnO2 thin films/doi:10.1016%2FS0169-4332(96)00169-9/rivista:Applied surface science/anno:1996/pagina_da:349/pagina_a:353/intervallo_pagine:349–353/volume:104-105
info:cnr-pdr/source/autori:P. De Padova, R. Larciprete, C. Ottaviani, C. Quaresima, P. Perfetti, E. Borsella, C. Astaldi, C. Comicioli, C. Crotti, M. Matteucci, M. Zacchigna, K. Prince/titolo:Synchrotron radiation photoelectron spectroscopy of the O(2s) core level as a tool for monitoring the reducing effects of ion bombardment on SnO2 thin films/doi:10.1016%2FS0169-4332(96)00169-9/rivista:Applied surface science/anno:1996/pagina_da:349/pagina_a:353/intervallo_pagine:349–353/volume:104-105
Synchrotron radiation ultraviolet photoemission spectroscopy (UPS) of O(2s) core levels, valence band (VB) and Sn(4d) spectroscopy was used to monitor the effect of Ar + sputtering on SnO 2 films. The decrease of the O(2s) peak intensity and the incr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::48b044d6d93d1afc91a3fcd1e32accac
https://doi.org/10.1016/s0169-4332(96)00169-9
https://doi.org/10.1016/s0169-4332(96)00169-9
Autor:
A. P. Douvalis, Munuswamy Venkatesan, C. B. Fitzgerald, J. M. D. Coey, Thomas Bakas, S. Huber
Room temperature ferromagnetism is found in (Sn1−xMx)O2 (M=Mn, Fe, Co, x=0.05) ceramics where x-ray diffraction confirms the formation of a rutile-structure phase. Room temperature saturation magnetization of 0.2 and 1.8 Am2 kg−1 for (Sn0.95Mn0.0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::47078dd24b4583c8d8b2f7763514dc8a
http://olympias.lib.uoi.gr/jspui/handle/123456789/17086
http://olympias.lib.uoi.gr/jspui/handle/123456789/17086
Autor:
V. Sivaramakrishan, N. Ganesan
Publikováno v:
IndraStra Global.
The influence of substrate temperature (300 to 460 K) on the electrical resistivity and thermoelectric power of thin films of SnTe and SnTe doped with 10% excess tin are investigated. The observed variation cannot be attributed to the improvement in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b65099798c365133cb7b9f49dfd02a61
https://igi.indrastra.com/items/show/69067
https://igi.indrastra.com/items/show/69067
Autor:
V Sivaramakrishnan, N Ganesan
Publikováno v:
IndraStra Global.
The effect of adsorption and temperature (300-450 K) on the electrical resistivity of SnSe thin films on the thickness range 500-2500 AA was investigated. Adsorption of oxygen has considerable influence on the electrical resistivity and it is observe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a5cc059eac1a53eca0d866793f3ad828