Zobrazeno 1 - 10
of 305
pro vyhledávání: '"SEGAWA, Kouji"'
Autor:
Tokuda, Satoru, Souma, Seigo, Segawa, Kouji, Takahashi, Takashi, Ando, Yoichi, Nakanishi, Takeshi, Sato, Takafumi
Publikováno v:
Commun Phys 4, 170 (2021)
Quasiparticle - a key concept to describe interacting particles - characterizes electron-electron interaction in metals (Fermi liquid) and electron pairing in superconductors. While this concept essentially relies on the simplification of hard-to-sol
Externí odkaz:
http://arxiv.org/abs/2107.14005
Autor:
Nakayama, Kosuke, Souma, Seigo, Trang, Chi Xuan, Takane, Daichi, Chen, Chaoyu, Avila, Jose, Takahashi, Takashi, Sasaki, Satoshi, Segawa, Kouji, Asensio, Maria Carmen, Ando, Yoichi, Sato, Takafumi
Publikováno v:
Nano Letters (2019)
We have performed scanning angle-resolved photoemission spectroscopy with a nanometer-sized beam spot (nano-ARPES) on the cleaved surface of Pb5Bi24Se41, which is a member of the (PbSe)5(Bi2Se3)3m homologous series (PSBS) with m = 4 consisting of alt
Externí odkaz:
http://arxiv.org/abs/1905.02565
Autor:
Trang, Chi Xuan, Wang, Zhiwei, Yamada, Keiko, Souma, Seigo, Sato, Takafumi, Takahashi, Takashi, Segawa, Kouji, Ando, Yoichi
Publikováno v:
Pays. Rev. B 93, 165123 (2016)
We report a systematic angle-resolved photoemission spectroscopy on topological insulator (TI) TlBi1-xSbxTe2 which is bulk insulating at 0.5 < x < 0.9 and undergoes a metal-insulator-metal transition with the Sb content x. We found that this transiti
Externí odkaz:
http://arxiv.org/abs/1606.08252
Autor:
Takane, Daichi, Souma, Seigo, Sato, Takafumi, Takahashi, Takashi, Segawa, Kouji, Ando, Yoichi
Recent discovery of bulk insulating topological insulator (TI) Bi2-xSbxTe3-ySey paved a pathway toward practical device application of TIs. For realizing TI-based devices, it is necessary to contact TIs with a metal. Since the band-bending at the int
Externí odkaz:
http://arxiv.org/abs/1606.07933
Autor:
Yang, Fan, Ghatak, Subhamoy, Taskin, A. A., Segawa, Kouji, Ando, Yuichiro, Shiraishi, Masashi, Kanai, Yasushi, Matsumoto, Kazuhiko, Rosch, Achim, Ando, Yoichi
Publikováno v:
Phys. Rev. B 94, 075304 (2016)
The charge-current-induced spin polarization is a key property of topological insulators for their applications in spintronics. However, topological surface states are expected to give rise to only one type of spin polarization for a given current di
Externí odkaz:
http://arxiv.org/abs/1605.04149
Publikováno v:
Phys. Rev. B 94, 024404 (2016)
We have investigated spin-electricity conversion on surface states of bulk-insulating topological insulator (TI) materials using a spin pumping technique. The sample structure is Ni-Fe|Cu|TI trilayers, in which magnetic proximity effects on the TI su
Externí odkaz:
http://arxiv.org/abs/1604.00751
Autor:
Yonezawa, Shingo, Tajiri, Kengo, Nakata, Suguru, Nagai, Yuki, Wang, Zhiwei, Segawa, Kouji, Ando, Yoichi, Maeno, Yoshiteru
Publikováno v:
Nature Phys. 17, 123-126 (2017). (published online: 10 Oct 2016)
Unconventional superconductivity is characterized by the spontaneous symmetry breaking of the macroscopic superconducting wavefunction in addition to the gauge symmetry breaking, such as rotational-symmetry breaking with respect to the underlying cry
Externí odkaz:
http://arxiv.org/abs/1602.08941
Autor:
Souma, S., Wang, Zhiwei, Kotaka, H., Sato, T., Nakayama, K., Tanaka, Y., Kimizuka, H., Takahashi, T., Yamauchi, K., Oguchi, T., Segawa, Kouji, Ando, Yoichi
Publikováno v:
Phys. Rev. B 93, 161112 (2016)
We have performed high-resolution angle-resolved photoemission spectroscopy (ARPES) on noncentrosymmetric Weyl semimetal candidate NbP, and determined the electronic states of both Nb- and P-terminated surfaces corresponding to the "opposite" surface
Externí odkaz:
http://arxiv.org/abs/1510.01503
Autor:
Borgwardt, N., Lux, J., Vergara, I., Wang, Zhiwei, Taskin, A. A., Segawa, Kouji, van Loosdrecht, P. H. M., Ando, Yoichi, Rosch, A., Grüninger, M.
Publikováno v:
Phys. Rev. B 93, 245149 (2016)
Three-dimensional topological insulators harbour metallic surface states with exotic properties. In transport or optics, these properties are typically masked by defect-induced bulk carriers. Compensation of donors and acceptors reduces the carrier d
Externí odkaz:
http://arxiv.org/abs/1508.03212
Publikováno v:
APL Materials 3, 083302 (2015)
We have synthesized a new ferromagnetic topological insulator by doping Cr to the ternary topological-insulator material TlSbTe2. Single crystals of Tl_{1-x}Cr_{x}SbTe2 were grown by a melting method and it was found that Cr can be incorporated into
Externí odkaz:
http://arxiv.org/abs/1505.05631