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Efficient single-photon emission from electrically driven InP quantum dots epitaxially grown on Si(001)

Autor: Wiesner, M., Schulz, W. -M., Kessler, C., Reischle, M., Rossbach, R., Jetter, M., Michler, P.

The heteroepitaxy of III-V semiconductors on silicon is a promising approach for making silicon a photonic platform for on-chip optical interconnects and quantum optical applications. Monolithic integration of both material systems is a long-time cha

Externí odkaz: http://arxiv.org/abs/1104.2144

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Numerical simulation of the internal plasma dynamics of post-flare loops

Autor: Fernandez, C. A., Costa, A., Elaskar, S., Schulz, W.

We integrate the MHD ideal equations of a slender flux tube to simulate the internal plasma dynamics of coronal post-flare loops. We study the onset and evolution of the internal plasma instability to compare with observations and to gain insight int

Externí odkaz: http://arxiv.org/abs/0908.2123

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Polarization fine-structure and enhanced single-photon emission of self-assembled lateral InGaAs quantum dot molecules embedded in a planar micro-cavity

Autor: Hermannstädter, C., Witzany, M., Beirne, G. J., Schulz, W. -M., Eichfelder, M., Rossbach, R., Jetter, M., Wang, L., Rastelli, A., Schmidt, O. G., Michler, P.

Publikováno v: J. Appl. Phys. 105, 122408 (2009)

Single lateral InGaAs quantum dot molecules have been embedded in a planar micro-cavity in order to increase the luminescence extraction efficiency. Using a combination of metal-organic vapor phase and molecular beam epitaxy samples could be produced

Externí odkaz: http://arxiv.org/abs/0809.2544

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