Zobrazeno 1 - 10
of 132 202
pro vyhledávání: '"SCHOTTKY barrier"'
Autor:
Hamada, Toshiyuki1 (AUTHOR) hamada@osakac.ac.jp, Nanno, Ikuo2 (AUTHOR), Ishikura, Norio3 (AUTHOR), Fujii, Masayuki4 (AUTHOR), Oke, Shinichiro5 (AUTHOR)
Publikováno v:
Energies (19961073). Dec2023, Vol. 16 Issue 23, p7792. 11p.
Autor:
Wakamatsu, Takeru1 (AUTHOR) wakamatsu.takeru.45e@st.kyoto-u.ac.jp, Isobe, Yuki1 (AUTHOR), Takane, Hitoshi1 (AUTHOR), Kaneko, Kentaro1,2 (AUTHOR), Tanaka, Katsuhisa1 (AUTHOR) tanaka.katsuhisa.4n@kyoto-u.ac.jp
Publikováno v:
Journal of Applied Physics. 4/21/2024, Vol. 135 Issue 15, p1-8. 8p.
A systematic investigation of the electrical characteristics of $\beta$-Ga$_2$O$_3$ Schottky barrier diodes (SBDs) has been conducted under high dose $^{60}$Co gamma radiation up to 5 Mrad (Si). Initial exposure of the diodes to 1 Mrad (Si) resulted
Externí odkaz:
http://arxiv.org/abs/2408.11028
Autor:
Li, Haoxin1 (AUTHOR), Han, Zhao1 (AUTHOR), Zhou, Xuanze1 (AUTHOR), Xu, Guangwei1 (AUTHOR) zhouxz@ustc.edu.cn, Long, Shibing1 (AUTHOR)
Publikováno v:
Journal of Applied Physics. 3/21/2024, Vol. 135 Issue 11, p1-7. 7p.
Autor:
Orfao, B.1,2 (AUTHOR) beatrizorfao@usal.es, Abou Daher, M.2 (AUTHOR), Peña, R. A.1 (AUTHOR), Vasallo, B. G.1 (AUTHOR), Pérez, S.1 (AUTHOR), Íñiguez-de-la-Torre, I.1 (AUTHOR), Paz-Martínez, G.1 (AUTHOR), Mateos, J.1 (AUTHOR), Roelens, Y.2 (AUTHOR), Zaknoune, M.2 (AUTHOR), González, T.1 (AUTHOR)
Publikováno v:
Journal of Applied Physics. 1/7/2024, Vol. 135 Issue 1, p1-6. 6p.
Autor:
Liu, Qing1,2 (AUTHOR) 2220110708@stu.lcu.edu.cn, Zheng, Xialian1,2 (AUTHOR) 2210110210@stu.lcu.edu.cn, Li, Mengru1,2 (AUTHOR) 2120280409@stu.lcu.edu.cn, Du, Qianqian1,2 (AUTHOR) duqianqian@lcu.edu.cn, Zhu, Chunhui3 (AUTHOR) chunhuizhu@hebtu.edu.cn, Wang, Wenjun1,2 (AUTHOR) wjwang@lcu.edu.cn, Qin, Shuchao1,2 (AUTHOR) qinshuchao@lcu.edu.cn
Publikováno v:
Materials (1996-1944). Dec2023, Vol. 16 Issue 23, p7364. 10p.
Autor:
Ocaya, Richard O.1 (AUTHOR) ocayaro@ufs.ac.za, Akinyelu, Andronicus A.2 (AUTHOR), Al-Sehemi, Abdullah G.3,4,5 (AUTHOR), Dere, Ayşegul6 (AUTHOR), Al-Ghamdi, Ahmed A.7 (AUTHOR), Yakuphanoğlu, Fahrettin8 (AUTHOR)
Publikováno v:
Scientific Reports. 11/20/2023, Vol. 13 Issue 1, p1-10. 10p.
Autor:
Hossain, Md Maruf1 (AUTHOR) mh5md@umsystem.edu, Singha, Showmik1 (AUTHOR), Titirsha, Twisha1 (AUTHOR), Eliza, Sazia A.1 (AUTHOR), Islam, Syed Kamrul1 (AUTHOR)
Publikováno v:
International Journal of High Speed Electronics & Systems. Jun-Sep2024, Vol. 33 Issue 2/3, p1-13. 13p.
Autor:
Idrees, M.1 (AUTHOR), Khan, Umair2 (AUTHOR), Ali, Basit2 (AUTHOR), Amin, Bin1,2 (AUTHOR) binukhn@gmail.com
Publikováno v:
Applied Physics A: Materials Science & Processing. Oct2024, Vol. 130 Issue 10, p1-10. 10p.
This letter reports the demonstration of lateral AlN Schottky barrier diodes (SBDs) on single-crystal AlN substrates by metalorganic chemical vapor deposition (MOCVD) with an ultra-low ideality factor ({\eta}) of 1.65, a breakdown voltage (BV) of 640
Externí odkaz:
http://arxiv.org/abs/2406.15688