Zobrazeno 1 - 10
of 686
pro vyhledávání: '"SAWANO, K."'
Publikováno v:
In Materials Science in Semiconductor Processing July 2024 177
Autor:
Fujita, Y., Yamada, M., Tsukahara, M., Naito, T., Yamada, S., Oki, S., Sawano, K., Hamaya, K.
Publikováno v:
Phys. Rev. B 100, 024431 (2019)
We find extraordinary behavior of the local two-terminal spin accumulation signals in ferromagnet (FM)/semiconductor (SC) lateral spin-valve devices. With respect to the bias voltage applied between two FM/SC Schottky tunnel contacts, the local spin-
Externí odkaz:
http://arxiv.org/abs/1803.08187
Publikováno v:
Applied Physics Express 11, 053006 (2018) (OPEN ACCESS)
Using four-terminal nonlocal magnetoresistance measurements in lateral spin-valve devices with Si$_{\rm 0.1}$Ge$_{\rm 0.9}$, we study pure spin current transport in a degenerate SiGe alloy ($n \sim$ 5.0 $\times$ 10$^{18}$ cm$^{-3}$). Clear nonlocal s
Externí odkaz:
http://arxiv.org/abs/1801.07450
Publikováno v:
In Journal of Crystal Growth 15 July 2022 590
We show nonlocal spin transport in n-Ge based lateral spin-valve devices with highly ordered Co_2FeSi/n^+-Ge Schottky tunnel contacts. Clear spin-valve signals and Hanle-effect curves are demonstrated at low temperatures, indicating generation, manip
Externí odkaz:
http://arxiv.org/abs/1311.6601
Autor:
Obata, T., Takeda, K., Kamioka, J., Kodera, T., Akhtar, W. M., Sawano, K., Oda, S., Shiraki, Y., Tarucha, S.
We develop quantum dots in a single layered MOS structure using an undoped Si/SiGe wafer. By applying a positive bias on the surface gates, electrons are accumulated in the Si channel. Clear Coulomb diamond and double dot charge stability diagrams ar
Externí odkaz:
http://arxiv.org/abs/1311.2681
Publikováno v:
J. Appl. Phys. 113, 17C501 (2013)
Using a metal-oxide-semiconductor field effect transistor (MOSFET) structure with a high-quality CoFe/n^+Si contact, we systematically study spin injection and spin accumulation in a nondegenerated Si channel with a doping density of ~ 4.5*10^15cm^-3
Externí odkaz:
http://arxiv.org/abs/1211.6825
Effect of the magnetic domain structure in the ferromagnetic contact on spin accumulation in silicon
We show a marked effect of the magnetic domain structure in an epitaxial CoFe contact on the spin accumulation signals in Si detected by three-terminal Hanle-effect measurements. Clear reduction in the spin accumulation signals can be seen by introdu
Externí odkaz:
http://arxiv.org/abs/1210.0624
Evidence for the Presence of Spin Accumulation in Localized States at Ferromagnet-Silicon Interfaces
We experimentally show evidence for the presence of spin accumulation in localized states at ferromagnet-silicon interfaces, detected by electrical Hanle effect measurements in CoFe/$n^{+}$-Si/$n$-Si lateral devices. By controlling the measurement te
Externí odkaz:
http://arxiv.org/abs/1207.1154
Temperature evolution of spin accumulation detected electrically in a nondegenerated silicon channel
Autor:
Ando, Y., Kasahara, K., Yamada, S., Maeda, Y., Masaki, K., Hoshi, Y., Sawano, K., Miyao, M., Hamaya, K.
Publikováno v:
Phys. Rev. B 85, 035320 (2012)
We study temperature evolution of spin accumulation signals obtained by the three-terminal Hanle effect measurements in a nondegenerated silicon channel with a Schottky-tunnel-barrier contact. We find the clear difference in the temperature-dependent
Externí odkaz:
http://arxiv.org/abs/1201.5950