Zobrazeno 1 - 10
of 4 145
pro vyhledávání: '"SATHE V"'
Autor:
De, Binoy Krishna, Sathe, V. G., Divya, Sharma, Pragati, Parate, Shubham Kumar, Kunwar, Hemant Singh, Nukala, Pavan, Roy, S. B.
Electric field-induced giant resistive switching triggered by insulator-to-metal transition (IMT) is one of the promising approaches for developing a new class of electronics often referred to as Mottronics. Achieving this resistive switching by mini
Externí odkaz:
http://arxiv.org/abs/2407.12507
Autor:
Sahu, S. R., Khan, S., Tripathy, A., Dey, K., Bano, N., Mohan, S. Raj, Joshi, M. P., Verma, S., Rao, B. T., Sathe, V. G., Shukla, D. K.
Publikováno v:
Physical Review B 108, 125133 (2023)
Multiple exciton generation (MEG) is a widely studied phenomenon in semiconductor nanocrystals and quantum dots, aimed at improving the energy conversion efficiency of solar cells. MEG is the process wherein incident photon energy is significantly la
Externí odkaz:
http://arxiv.org/abs/2310.14835
Publikováno v:
Journal of Electronic Materials, July, 2024 (published online on July 12, 2024)
We report an isothermal electric field-induced first-order phase transition from Mott-insulator to the metallic state in the epitaxial thin film of V$_2$O$_3$ in the temperature regime below its Mott transition temperature $\approx$ 180 K. This isoth
Externí odkaz:
http://arxiv.org/abs/2305.05190
Autor:
Sahu, S. R., Majid, S. S., Ahad, A., Tripathy, A., Dey, K., Pal, S., De, B. K., Hsieh, Wen-Pin, Rawat, R., Sathe, V. G., Shukla, D. K.
Vanadium dioxide (VO2) has drawn significant attention for its near room temperature insulator to metal transition and associated structural phase transition. The underlying Physics behind the temperature induced insulator to metal and concomitant st
Externí odkaz:
http://arxiv.org/abs/2210.02691
Autor:
Dwij, Vivek, De, Binoy Krishna, Kunwar, Hemant Singh, Rana, Sumesh, Velpula, Praveen Kumar, Shukla, D. K., Gupta, M. K., Mittal, R., Sathe, V. G.
The sensitivity of ferroelectric domain walls to external stimuli makes them functional entities in nanoelectronic devices. Specifically, optically driven domain reconfiguration with in-plane polarization is advantageous and thus highly sought. Here,
Externí odkaz:
http://arxiv.org/abs/2207.09207
Autor:
Kundu, S., Pal, A., Chauhan, Amit, Patro, K., Anand, K., Rana, S., Sathe, V. G., Joshi, Amish G., Pal, P., Sethupathi, K., Nanda, B. R. K., Khuntia, P.
Publikováno v:
Physical Review Materials 6, 104401 (2022)
Double perovskite-based magnets wherein frustration and competition between emergent degrees of freedom are at play can lead to novel electronic and magnetic phenomena. Herein, we report the electronic structure and magnetic properties of an ordered
Externí odkaz:
http://arxiv.org/abs/2205.10877
Exchange bias (EB) shifts are commonly reported for the ferromagnetic (FM)/antiferromagnetic (AFM) bilayer systems. While stoichiometric ordered Sm$_{2}$NiMnO$_{6}$ (SNMO) and BaTiO$_{3}$ (BTO) are known to possesses FM and diamagnetic orderings resp
Externí odkaz:
http://arxiv.org/abs/2205.02011
Autor:
Prajapat, Deepak, Surampalli, Akash, Panchwanee, Anjali, Meneghini, Carlo, Sergeev, Ilya, Leubold, Olaf, Velaga, Srihari, Merlini, Marco, Glazyrin, Konstantin, Steinbrügge, René, Jafari, Atefeh, Poswal, Himashu Kumar, Sathe, V. G., Reddy, V. Raghavendra
Publikováno v:
J. Magn. Magn. Mater., 562 (2022) 169783
We report the structural and magnetic properties of four-layer Aurivillius compound Bi$_5$FeTi$_3$O$_{15}$ (BFTO) at high hydrostatic pressure conditions. The high-pressure XRD data does not explicitly show structural phase transitions with hydrostat
Externí odkaz:
http://arxiv.org/abs/2203.05697
Autor:
Ahlawat, Anju, Khan, Azam Ali, Deshmukh, Pratik, Shirolkar, Mandar M., Sinha, A. K., Satapathy, S., Sathe, V. G., Choudhary, R. J.
We have investigated the coupling of lattice with spin via strain interactions in the CoFe2O4/PMN-PT composite system. X-ray diffraction and Raman spectroscopic studies illustrate a remarkable modification in CoFe2O4lattice across Curie temperature (
Externí odkaz:
http://arxiv.org/abs/2202.11986
Multiple exciton generation (MEG) is a widely studied phenomenon in semiconductor nanocrystals and quantum dots wherein photo-excited carriers relax by generating additional electron-hole pairs. Here, we present the first experimental observation of
Externí odkaz:
http://arxiv.org/abs/2202.04909