Zobrazeno 1 - 8
of 8
pro vyhledávání: '"SALAH KEMOUCHE"'
Publikováno v:
Journal of Engineering Science and Technology, Vol 11, Iss 3, Pp 346-361 (2016)
The capacitive pressure sensors based on silicon are characterized by their very high sensitivities and their low power consumption. Nevertheless, their thermal behavior remains more or less unpredictable because they can indicate very high thermal c
Externí odkaz:
https://doaj.org/article/64fc55493be240eebacd6560e5766d5b
Publikováno v:
Key Engineering Materials. 644:101-105
In this paper, the thermo-mechanical modelling of an entire sensor structure, under hydrostatic pressure, is carried out using commercial FEM software COMSOL multiphysics. A comparison of the obtained results with those found in the literature, allow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fdc2e439a94b95f9f7f28b6eebeee6e
https://doi.org/10.4028/www.scientific.net/kem.644.101
https://doi.org/10.4028/www.scientific.net/kem.644.101
Publikováno v:
Journal of Sensor Technology. :59-65
Piezoresistive pressure sensors based on silicon have a large thermal drift because of their high sensitivity to temperature. The study of the effect of the temperature and doping level on characteristics of these sensors is essential to define the p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24435a8c4e9514d6756e0f731389a55f
https://doi.org/10.4236/jst.2014.42007
https://doi.org/10.4236/jst.2014.42007
Publikováno v:
2016 12th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME).
The thermal drift provoked by the Joule heating in piezoresistive pressure sensors is a major source of imprecision for their applications requiring high accuracies measurements. This thermal drift affects greatly the performance of the such sensors.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81e97de590eaa6586a1c4c02f5f90a11
https://doi.org/10.1109/prime.2016.7519509
https://doi.org/10.1109/prime.2016.7519509
Publikováno v:
International Journal of Electrical and Computer Engineering (IJECE). 6:1223
Thermal drift caused by Joule heating in piezoresistive pressure sensors affects greatly the results in the shift of the offset voltage of the such sensors. The study of the thermal behavior of these sensors is essential to define the parameters that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::89c986a755d58d2161702b84058017f1
https://doi.org/10.11591/ijece.v6i3.pp1223-1232
https://doi.org/10.11591/ijece.v6i3.pp1223-1232
Autor:
Salah, Kemouche, Fouad, Kerrour
Publikováno v:
Advanced Engineering Forum; November 2018, Vol. 30 Issue: 1 p43-53, 11p
Publikováno v:
Scopus-Elsevier
In this paper we investigate the thermo mechanical behavior of a silicon piezoresistive pressure sensor. The totally built-in thin silicon membrane sensor response computation under constant and uniform pressure assuming small deflections have been d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::10ee1a424a14b0b3450ca2e0adee3464
https://doi.org/10.15866/iremos.v7i3.1070
https://doi.org/10.15866/iremos.v7i3.1070
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