Zobrazeno 1 - 10
of 423
pro vyhledávání: '"SACHIN S. Sapatnekar"'
Autor:
Hüsrev Cılasun, Ziqing Zeng, Ramprasath S, Abhimanyu Kumar, Hao Lo, William Cho, William Moy, Chris H. Kim, Ulya R. Karpuzcu, Sachin S. Sapatnekar
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-11 (2024)
Abstract This work solves 3SAT, a classical NP-complete problem, on a CMOS-based Ising hardware chip with all-to-all connectivity. The paper addresses practical issues in going from algorithms to hardware. It considers several degrees of freedom in m
Externí odkaz:
https://doaj.org/article/4e53e72417ba40bd98dbd0b7afaf01a3
Autor:
Brandon R. Zink, Yang Lv, Masoud Zabihi, Husrev Cilasun, Sachin S. Sapatnekar, Ulya R. Karpuzcu, Marc D. Riedel, Jian-Ping Wang
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 9, Iss 1, Pp 29-37 (2023)
Stochastic computing (SC) has emerged as a promising solution for performing complex functions on large amounts of data to meet future computing demands. However, the hardware needed to generate random bit-streams using conventional CMOS-based techno
Externí odkaz:
https://doaj.org/article/c9f3e83fef974b5abe583fe39109a981
Autor:
Masoud Zabihi, Salonik Resch, Husrev Cilasun, Zamshed I. Chowdhury, Zhengyang Zhao, Ulya R. Karpuzcu, Jian-Ping Wang, Sachin S. Sapatnekar
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 7, Iss 2, Pp 88-96 (2021)
This article describes how 3-D XPoint memory arrays can be used as in-memory computing accelerators. We first show that thresholded matrix-vector multiplication (TMVM), the fundamental computational kernel in many applications including machine learn
Externí odkaz:
https://doaj.org/article/a08cdbd1ba8b4828bc75a8c2b2273af0
Autor:
Zamshed I. Chowdhury, Masoud Zabihi, S. Karen Khatamifard, Zhengyang Zhao, Salonik Resch, Meisam Razaviyayn, Jian-Ping Wang, Sachin S. Sapatnekar, Ulya R. Karpuzcu
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 6, Iss 1, Pp 80-88 (2020)
Recent years have witnessed an increasing interest in the processing-in-memory (PIM) paradigm in computing due to its promise to improve the performance through the reduction of energy-hungry and long-latency memory accesses. Joined with the explosio
Externí odkaz:
https://doaj.org/article/9b134bc2ab1640be8970a3a8e791a15d
Autor:
Masoud Zabihi, Arvind K. Sharma, Meghna G. Mankalale, Zamshed Iqbal Chowdhury, Zhengyang Zhao, Salonik Resch, Ulya R. Karpuzcu, Jian-Ping Wang, Sachin S. Sapatnekar
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 6, Iss 1, Pp 71-79 (2020)
This article presents a method for analyzing the parasitic effects of interconnects on the performance of the STT-MTJ-based computational random access memory (CRAM) in-memory computation platform. The CRAM is a platform that makes a small reconfigur
Externí odkaz:
https://doaj.org/article/e2947372c0da43b6b30bc48893c20bb7
Autor:
Jeehwan Song, Ibrahim Ahmed, Zhengyang Zhao, Delin Zhang, Sachin S. Sapatnekar, Jian-Ping Wang, Chris H. Kim
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 4, Iss 2, Pp 76-84 (2018)
Voltage-controlled magnetic anisotropy (VCMA) has attracted great attention as it allows faster switching and lower energy consumption compared to traditional spin-transfer torque-based magnetization switching. In this paper, we evaluate the operatin
Externí odkaz:
https://doaj.org/article/6c59db501c4841a0851cc1f2a52402c3
Autor:
Zhaoxin Liang, Meghna G. Mankalale, Jiaxi Hu, Zhengyang Zhao, Jian-Ping Wang, Sachin S. Sapatnekar
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 4, Iss 2, Pp 51-59 (2018)
Magnetoelectric spin-orbit (MESO) logic is a promising spin-based post-CMOS logic computation paradigm. This paper explores the application of the basic MESO device concept to more complex logic structures. A simulation framework is first developed t
Externí odkaz:
https://doaj.org/article/ced6b8b381f54a799307f0c05e9b621b
Autor:
Ibrahim Ahmed, Zhengyang Zhao, Meghna G. Mankalale, SACHIN S. Sapatnekar, Jian-Ping Wang, Chris H. Kim
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 3, Pp 74-82 (2017)
The spin transfer torque magnetoresistive random access memory (STT-MRAM) is the leading candidate for spin-based memories. Nevertheless, the high write energy and read disturbance of the STT-MRAM motivated researchers to find other solutions. The sp
Externí odkaz:
https://doaj.org/article/647fbaba35734b12b891cd810f771d60
Autor:
Meghna G. Mankalale, Zhaoxin Liang, Zhengyang Zhao, Chris H. Kim, Jian-Ping Wang, Sachin S. Sapatnekar
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 3, Pp 27-36 (2017)
This paper proposes composite-input magnetoelectric-based logic technology (CoMET), a fast and energy-efficient spintronics device for logic applications. An input voltage is applied to a ferroelectric (FE) material, in contact with a composite struc
Externí odkaz:
https://doaj.org/article/88804f79631f4aee864b66959f2a5440
Autor:
Zhaoxin Liang, Sachin S. Sapatnekar
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 2, Pp 10-19 (2016)
All-spin logic (ASL) is a spin-based candidate for implementing logic in the next generation designs. The energy and the delay of ASL circuits are both inherently related to the geometric parameters of ASL gates, and the careful selection of the dime
Externí odkaz:
https://doaj.org/article/8fc07e2cedcc49af98cbafea7161f0bf