Zobrazeno 1 - 10
of 15
pro vyhledávání: '"S.Ya. Tipissev"'
Autor:
N. N. Ledentsov, S.Ya. Tipissev, Dieter Bimberg, V. N. Petrov, Vladimir G. Dubrovskii, G. M. Gur'yanov, G. E. Cirlin, Alexander Golubok
Publikováno v:
Surface Science. :895-898
Using scanning tunneling microscopy we have studied the influence of initial stage (up to 1.5 monolayers) growth kinetics on the surface morphology of 3 ML InAs/GaAs(100) grown on vicinal surfaces (misoriented by 3° and 7° towards [011] direction)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e8a49b40945c327528372a8cdd6a182
https://doi.org/10.1016/s0039-6028(96)01517-8
https://doi.org/10.1016/s0039-6028(96)01517-8
Autor:
S.Ya. Tipissev, V. N. Petrov, Vladimir G. Dubrovskii, Alexander Golubok, N. N. Ledentsov, G.M. Guryanov, M. V. Maximov, G. E. Cirlin, Dieter Bimberg
Publikováno v:
Czechoslovak Journal of Physics. 47:379-384
Direct formation of InGaAs/GaAs quantum dots is studied comparatively by Reflection High Energy Electron Diffraction, Scanning Tunneling Microscopy and Photoluminescence methods. It is found that submonolayer migration enhanced epitaxy growth mode al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::079f038e33592b263e322094b37c7f93
https://doi.org/10.1023/a:1021294719812
https://doi.org/10.1023/a:1021294719812
Autor:
S.Ya. Tipissev, Alexander Golubok
Publikováno v:
Tribology International. 29:373-376
Three variants of simple positioning devices with step lengths adjustable in the range from 10 to 1000 nm have been developed for tip/sample displacement in microprobe instruments. Design principles, step length estimation formulae and results of exp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35a3064e335738cacddbbd3b6fadd092
https://doi.org/10.1016/0301-679x(95)00064-b
https://doi.org/10.1016/0301-679x(95)00064-b
Autor:
Yu. B. Samsonenko, V. B. Gubanov, N. N. Ledentsov, S.Ya. Tipissev, Vitaly Shchukin, Marius Grundmann, G. M. Gur'yanov, Zh. I. Alferov, V. N. Petrov, G. E. Cirlin, Alexander Golubok, N. K. Polyakov, Dieter Bimberg
Publikováno v:
Surface Science. :651-655
Formation of uniform arrays of InAs quantum dots on GaAs(100) singular and vicinal (3° towards [011] direction) surfaces crucially depends on the deposition mode chosen. For dots formed with continuous As flux impinging on the surface and simultaneo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fb459ef58077f27ba141301d6d8ae84
https://doi.org/10.1016/0039-6028(95)01221-4
https://doi.org/10.1016/0039-6028(95)01221-4
Autor:
G. M. Gur'yanov, Dieter Bimberg, Nikolai N. Ledentsov, Zh. I. Alferov, Vitaly Shchukin, S.Ya. Tipissev, G. E. Cirlin, Alexander Golubok, Marius Grundmann
Publikováno v:
Surface Science. :646-650
Intermediate (1–1.5 monolayer) stage of InAs deposition on the GaAs(100) singular and vicinal (3° towards [011] direction) surfaces results in the formation of different InAs surface arrangements. The formation of few monolayer-height quantum wire
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3fb0132bb6381e9cd39ecd182d89004
https://doi.org/10.1016/0039-6028(95)01220-6
https://doi.org/10.1016/0039-6028(95)01220-6
Autor:
E. P. Musikhina, Nikolai N. Ledentsov, V. N. Petrov, G. E. Cirlin, N. K. Polyakov, S.Ya. Tipissev, Yu. B. Samsonenko, V. B. Gubanov, Alexander Golubok, G. M. Gur'yanov
Publikováno v:
Surface Science. :414-418
We have performed a scanning tunneling microscopy study of the formation of (In,Ga)As/GaAs and InAs/GaAs quantum dot and quantum wire arrays on GaAs(100) and vicinal surfaces during submonolayer molecular beam epitaxy. During the initial stage of str
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05d3d49db9f915c9558843000af20bfd
https://doi.org/10.1016/0039-6028(95)00299-5
https://doi.org/10.1016/0039-6028(95)00299-5
Autor:
G. E. Cirlin, Dieter Bimberg, N. N. Ledentsov, S.Ya. Tipissev, Marius Grundmann, G. M. Gur'yanov, Alexander Golubok, P. S. Kop’ev
Publikováno v:
Applied Physics Letters. 67:97-99
Initial stage of InAs pseudomorphic layer transformation (1–3 ML) on GaAs (100) singular surface may result for sequential submonolayer molecular beam epitaxy in formation of a pseudoperiodic array of InAs ‘‘wires’’ along the [001] directio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb3540894390c0f97e2ade0a45c68a38
https://doi.org/10.1063/1.115520
https://doi.org/10.1063/1.115520
Autor:
N. P. Korneeva, N. K. Polyakov, Vladimir G. Dubrovskii, N. N. Ledentsov, S.Ya. Tipissev, Dieter Bimberg, V. N. Demidov, Alexander Golubok, G. E. Cirlin, V. N. Petrov
Publikováno v:
Physics, Chemistry and Application of Nanostructures.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b5a6c3ce52349be095fdfcefa3659f3
https://doi.org/10.1142/9789814503938_0058
https://doi.org/10.1142/9789814503938_0058
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Akademický článek
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