Zobrazeno 1 - 10
of 251
pro vyhledávání: '"S.W. Duncan"'
Autor:
Cheh-Ming Liu, S.W. Duncan, D.-W. Tu, J.J. Rosenberg, David B. Rutledge, M.P. De Lisio, A. Moussessian
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 44:2136-2144
A 100-element hybrid grid amplifier has been fabricated, The active devices in the grid are custom-made pseudomorphic high electron mobility transistor (pHEMT) differential-pair chips. We present a model for gain analysis and compare measurements wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::054c6485091e72428055a48b8605a933
https://doi.org/10.1109/22.556440
https://doi.org/10.1109/22.556440
Autor:
B. Golja, N.E. Byer, S.W. Duncan, Sander Weinreb, S.P. Svensson, Abdollah Eskandarian, B.C. Kane, D.-W. Tu
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 42:2590-2597
Five versions of monolithic W-band 0.1 /spl mu/m AlGaAs-InGaAs-GaAs pseudomorphic HEMT, four-stage, low noise amplifiers based on two different designs were developed. These millimeter wave monolithic integrated circuits have produced a minimum noise
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf2255b1e94355847ff85d3b93d61168
https://doi.org/10.1109/22.339801
https://doi.org/10.1109/22.339801
Autor:
He, Wei‐Jie1 (AUTHOR), Yang, Peng1,2 (AUTHOR), Huang, Tao3 (AUTHOR), Liu, Yu‐Fan1 (AUTHOR), Zhang, Yu‐Wei1 (AUTHOR), Zhang, Wen‐Min1 (AUTHOR), Zhang, Tian‐Tian1 (AUTHOR), Zheng, Meng‐Ru1 (AUTHOR), Ma, Ling1 (AUTHOR), Zhao, Chang‐Xing1 (AUTHOR), Li, He‐Ping3 (AUTHOR), Liao, Yu‐Cai1 (AUTHOR), Wu, Ai‐Bo4 (AUTHOR), Zhang, Jing‐Bo1 (AUTHOR) jingbozhang@mail.hzau.edu.cn
Publikováno v:
Plant Biotechnology Journal. Sep2024, Vol. 22 Issue 9, p2395-2409. 15p.
Autor:
Kelman, Megan J.1 (AUTHOR) megan.kelman@agr.gc.ca, Miller, J. David2 (AUTHOR) david.miller@carleton.ca, Renaud, Justin B.1 (AUTHOR) justin.renaud@agr.gc.ca, Baskova, Daria1,3 (AUTHOR) daria.baskova@agr.gc.ca, Sumarah, Mark W.1 (AUTHOR) mark.sumarah@agr.gc.ca
Publikováno v:
Toxins. Aug2024, Vol. 16 Issue 8, p372. 14p.
Publikováno v:
1992 IEEE Microwave Symposium Digest MTT-S.
The authors present early design, fabrication and performance information on a 210-GHz subharmonically pumped GaAs monolithic microwave integrated circuit (MMIC) mixer using two individually biased antiparallel diodes in a simple crossed waveguide mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2233c616eb001904c87df8993e32de10
https://doi.org/10.1109/mwsym.1992.188054
https://doi.org/10.1109/mwsym.1992.188054
Publikováno v:
1996 IEEE MTT-S International Microwave Symposium Digest.
We present a 36-element monolithic millimeter-wave grid amplifier. The grid operates in the U-band, using pseudomorphic High Electron Mobility Transistors (pHEMTs) as the active devices. The grid has a peak gain of 6.5 dB at 44 GHz. The grid can be t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df3fad1404cbaf9897f07696d58cf14b
https://doi.org/10.1109/mwsym.1996.511228
https://doi.org/10.1109/mwsym.1996.511228
Autor:
S.W. Duncan, S.E. Brown, E. Fischer, Abdollah Eskandarian, N.E. Byer, W.P. Berk, B. Golja, S.P. Svensson, B.C. Kane, D.-W. Tu, D.M. Gill, S. Weinreb
Publikováno v:
Proceedings of 1994 IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium.
Two monolithic W-band four-stage LNA's based on 0.1 /spl mu/m AlGaAs-InGaAs-GaAs p-HEMT technology were developed. One with integral waveguide coupling probes has achieved a noise figure of 4.0 dB with a gain of 30.8 dB at 94 GHz; the other has a gai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::156dd1b4c90173661e9a6aca1356a9b2
https://doi.org/10.1109/mcs.1994.332149
https://doi.org/10.1109/mcs.1994.332149
Autor:
S.W. Duncan, M. Zimmerman, S. Weinreb, Abdollah Eskandarian, N.E. Byer, S.P. Svensson, D.M. Gill, B. Golja, B. Power, D.-W. Tu
Publikováno v:
Proceedings of 1994 IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium.
A monolithic, three-stage W-band power amplifier, developed using pseudomorphic HEMTs, has exhibited record gain, power per unit gate width, and power per unit area. The amplifier has a small signal gain of 22-dB and an output power of 37-mW with an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1aa61689427caa04e820f1fca3402975
https://doi.org/10.1109/mcs.1994.332148
https://doi.org/10.1109/mcs.1994.332148
Autor:
S.P. Svensson, B. Golja, S.B. Southwick, D.C. Martel, S.W. Duncan, Abdollah Eskandarian, B. Power, M.W. Trippe, D.-W. Tu, S. Weinreb, G. Mendenilla, N.E. Byer, H.B. Sequeira
Publikováno v:
IEEE 1991 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers.
Monolithic W-band amplifiers and a novel W-band mixer fabricated using a 0.1 mu m pseudomorphic MODFET technology are presented. Single-stage W-band amplifiers delivered 8.5-dB gain; four-stage units showed 23-dB maximum gain or 4.5-dB noise figure,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39d09143c9bc3c8b8897ef86fabbb1d7
https://doi.org/10.1109/mcs.1991.148086
https://doi.org/10.1109/mcs.1991.148086
Autor:
Abdollah Eskandarian, N.E. Byer, B. Golja, D.-W. Tu, S. Weinreb, S.P. Svensson, D.C. Martel, S.B. Southwick, M.W. Trippe, H.B. Sequeira, S.W. Duncan
Publikováno v:
12th Annual Symposium on Gallium Arsenide Integrated Circuit (GaAs IC).
A unique realization of a single-stage monolithic GaAs W-band amplifier based on InGaAs-AlGaAs pseudomorphic (PM) MODFET devices is reported. This work reflects a number of significant accomplishments: (1) superior control of MBE to grow the PM layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f39dcac6264402ebaba747c41ae13f26
https://doi.org/10.1109/gaas.1990.175476
https://doi.org/10.1109/gaas.1990.175476