Zobrazeno 1 - 10
of 150
pro vyhledávání: '"S.V. Svechnikov"'
Publikováno v:
Thin Solid Films. :494-497
Progress in cell efficiency was designed by Si n+p junction/organic layer hybrid. This design comprises the Si solar cell structure with patterned n+p junction and heterocycleamine organic layer containing N, S, P, Cl, J atoms. The initial solar cell
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::648cc79cbcce542b6208f8ee4740acc7
https://doi.org/10.1016/j.tsf.2005.12.027
https://doi.org/10.1016/j.tsf.2005.12.027
Publikováno v:
Thin Solid Films. 428:165-169
We used (001)-oriented silicon wafers, chemically etched under special conditions, as substrates for laser epitaxy of HgCdTe. Three types of Si surface with different microrelief were obtained: flat, pyramid-like and plate-like. Thin films of HgCdTe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3aa8536dcc6174f95681b3c5f89342db
https://doi.org/10.1016/s0040-6090(02)01169-0
https://doi.org/10.1016/s0040-6090(02)01169-0
Autor:
V.N. Shapar, S.V. Svechnikov
Publikováno v:
Kosmìčna nauka ì tehnologìâ. 9:36-40
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6eb5af8a42c0396884eeb007b6f69c0
https://doi.org/10.15407/knit2003.02s.036
https://doi.org/10.15407/knit2003.02s.036
Publikováno v:
Kosmìčna nauka ì tehnologìâ. 9:30-35
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b0da81552645a176cf221485b016f79
https://doi.org/10.15407/knit2003.02s.030
https://doi.org/10.15407/knit2003.02s.030
Publikováno v:
Kosmìčna nauka ì tehnologìâ. 8:96-99
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efa00078134065914afdbd6754999ca5
https://doi.org/10.15407/knit2002.04.096
https://doi.org/10.15407/knit2002.04.096
Autor:
D.V. Fedin, Yu.M. Litvin, V.G. Litovchenko, A.A. Evtukh, E.B. Kaganovich, S.V. Svechnikov, E.G. Manoilov
Publikováno v:
Materials Science and Engineering: C. 19:401-405
An array of field emitting tips made on silicon with coating nanocomposite film was made by a laser direct-write process. The laser was used in air: a single laser pulses forms a single conical tip and moved to create an array. In this process, the s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e71964859ca86487f2d4b325eadfbdf
https://doi.org/10.1016/s0928-4931(01)00432-5
https://doi.org/10.1016/s0928-4931(01)00432-5
Autor:
G. Wisz, T.Ya. Gorbach, R. Ciach, S.V. Svechnikov, A. Rakowska, Petro Smertenko, Marian Kuzma, E. Sheregii
Publikováno v:
Scopus-Elsevier
Films of HgCdTe have been obtained by pulse laser deposition method in dynamic vacuum (pressure∼10 −6 Torr) at 293–543 K. Two different kinds of Si surface were used as substrate: (a) flat standard polished {100} surface and (b) anisotropically
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::897a2ab92396ea36b87a2aa89faa3022
https://doi.org/10.1016/s0169-4332(98)00441-3
https://doi.org/10.1016/s0169-4332(98)00441-3
Autor:
R. Ciach, Wojciech Maziarz, G. Wisz, S.V. Svechnikov, T.Ya. Gorbach, Jerzy Morgiel, Petro Smertenko, M. Kuźma, E. Sheregii
Publikováno v:
Scopus-Elsevier
Thin (about 300 nm and less) HgCdTe and CdTe films have been deposited on Si flat and anisotropically etched microrelief surfaces by YAG:Nd3+ pulsed laser at various substrate temperatures in the range from 323 K to 423 K with 100 laser shots. These
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1e93844159507c267767f697c515a32c
https://doi.org/10.1016/s0040-6090(97)01133-4
https://doi.org/10.1016/s0040-6090(97)01133-4
Publikováno v:
Sensors and Actuators B: Chemical. 35:44-47
The fluorescence of porous silicon obtained by a special procedure using chemical and laser beam treatment of silicon crystal was investigated in water, buffer and a solution containing sodium chloride. It was demonstrated that the intensity of the f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68d96c82fa0458b7ecca4a657fca206b
https://doi.org/10.1016/s0925-4005(96)02011-4
https://doi.org/10.1016/s0925-4005(96)02011-4
Publikováno v:
Applied Surface Science. :881-886
HgCdTe films have been deposited on Si anisotropically etched microrelief (AEMR) surfaces by YAG:Nd3+ pulsed laser without substrate heating. The formation and a comparative investigation of morphology and some electrophysical properties of HgCdTe fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::deeaaf5b317d914b047e1954cf8307fa
https://doi.org/10.1016/0169-4332(95)00583-8
https://doi.org/10.1016/0169-4332(95)00583-8