Zobrazeno 1 - 10
of 59
pro vyhledávání: '"S.S. Tneh"'
Autor:
Siowwoon Ng, K.P. Beh, Zainuriah Hassan, Y.L. Cheong, S.S. Tneh, Siti Nurfarhana Sohimee, Fong Kwong Yam
Publikováno v:
Sensors and Actuators A: Physical. 279:263-271
A prototype ultraviolet (UV) photodetector based on photoelectrochemical (PEC) cell from material synthesis up to assembly was demonstrated in this work. Self-organized titanium dioxide (TiO2) nanotube layers (1 and 5 μm thicknesses) prepared by ele
Publikováno v:
Superlattices and Microstructures. 97:202-211
A thin intermediate layer (Ag, AuSn, In, Ni, Sn, SiO2) was individually deposited on glass substrates prior to the deposition of indium-tin-oxide (ITO) thin film by radio-frequency (RF) magnetron sputtering employing ITO target (composition ratio of
Autor:
Zainuriah Hassan, S.S. Tneh, S.Y. Chin, Lee Siang Chuah, S. K. Mohd Bakhori, Yusnizam Yusuf, Ahmad
Publikováno v:
Applied Mechanics and Materials. 606:3-7
ZnO nanosheetlike structures were synthesized on zinc (Zn) foil substrates by electrochemical deposition method in ZnCl2aqueous solutions at a temperature of 90 °C. In addition, the synthetic parameters in this work allow additional structural direc
Publikováno v:
Composite Interfaces. 21:217-232
Zinc oxide (ZnO) has been successfully synthesized by an anodization method, and it has been fabricated through anodization method with different concentration of zinc nitrate. The element composition, surface inspection, structural, and morphologica
Publikováno v:
Advanced Materials Research. 832:172-177
Heterostructures consisting of ZnO and diamond appear to have an elusive nature. A rectifying behaviour was previously observed only for heterojunctions with very lightly doped p-type diamond using residual boron gas during the chemical vapour deposi
Publikováno v:
Microelectronics International. 28:3-6
PurposeThe purpose of this paper is to propose a simple physical evaporation route in which catalyst‐free zinc oxide (ZnO) nanoscrewdrivers were deposited on silicon (Si) (111) substrates.Design/methodology/approachPrior to the deposition, the Si (
Publikováno v:
Microelectronics International. 28:8-11
PurposeThe purpose of this paper is to demonstrate the n‐ZnO/p‐Si Schottky photodiodes.Design/methodology/approachA Zn film was deposited on silicon substrate by dc sputtering deposition technology from high purity zinc (Zn) targets. Then, the Zn
Publikováno v:
Composite Interfaces. 18:49-56
In this work, radio-frequency (RF) nitrogen plasma-assisted molecular beam epitaxy (PA-MBE) technique was used to grow AlN layers on Si(111) substrate. Subsequently, the thermal evaporation technique was used to deposit the zinc films on Si(111) subs
Publikováno v:
Composite Interfaces. 18:371-376
Doping SnO2 with metal cations has been tested for photo-catalytic applications by shifting the threshold for photonic excitation of the tin oxide (SnO2) towards the visible. Nevertheless, as far as we know, there is no report on how Ni-doping of SnO
Publikováno v:
Advanced Materials Research. 925:433-435
Excellent tin oxide (SnO2) ohmic and Schottky contacts are need for device utilizations and essential electrical characterization. Up to now, metal contact property studies on SnO2 are inadequate and provide miscellaneous results. Ohmic contacts have