Zobrazeno 1 - 10
of 73
pro vyhledávání: '"S.S. Khludkov"'
Autor:
S.S. Khludkov, null et al.
Publikováno v:
Izvestiya vysshikh uchebnykh zavedenii. Fizika. 65:3-16
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa18658b8849f51be51179cc3ec75400
https://doi.org/10.17223/00213411/65/6/3
https://doi.org/10.17223/00213411/65/6/3
Akademický článek
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Autor:
E. P. Drugova, L.P. Porokhovnichenko, O.B. Koretskaya, A.I. Potapov, D.L. Budnitsky, V.P. Germogenov, N.N. Bakin, L.S. Okaevich, A. V. Tyazhev, S.S. Khludkov, A.P. Vorobiev, G.I. Ayzenshtat, Kevin M. Smith, O.P. Tolbanov, M. D. Vilisova
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 466:25-32
A comparative analysis of characteristics of detector structures fabricated by means of technology of epitaxial growth of an undoped high-resistive GaAs layer as well as structures based on SI-GaAs compensated with Cr during a diffusion process is pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3242b68fad96e852ca7a9a0fc8a65973
https://doi.org/10.1016/s0168-9002(01)00820-8
https://doi.org/10.1016/s0168-9002(01)00820-8
Autor:
L.S. Okaevich, A.V. Khan, O.B. Koretskaya, A. V. Tyazhev, A.I. Potapov, G.I Aizenshtadt, V.G. Kanaev, S.S. Khludkov, O. P. Tolbanov
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 448:188-191
The article presents results of investigation of interaction of the structures based on GaAs compensated by interaction of the deep centers with ionizing radiation of a wide spectral range. The structures are able to record single quantum of electrom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c790d5da7d5e8d4481b69fc61e136cac
https://doi.org/10.1016/s0168-9002(99)00734-2
https://doi.org/10.1016/s0168-9002(99)00734-2
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 410:36-40
Results on the investigation of electrical characteristics of high-resistivity π-ν-n structures based on GaAs compensated with Cr and charge collection dependences on the average electric field and on detector structures parameters are presented.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a70683c1989ab9d9985a13ca6c2b3bc6
https://doi.org/10.1016/s0168-9002(98)00139-9
https://doi.org/10.1016/s0168-9002(98)00139-9
Autor:
V.E. Stepanov, S.S. Khludkov, A.V. Chuntonov, A.A Koretski, V.B. Chmill, A. P. Vorobiev, Kevin M. Smith, O. P. Tolbanov, A.I. Potapov, L.S Okaevitch, A.V. Smol
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 409:247-250
Some GaAs properties are presented in comparison with Si. Tomsk technology has proposed non-traditional way of a sensitive layer creation. As a result the radiation hardness of these detectors is up to 10 15 n / cm 2 at a neutron fluence and up to 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f8a4c4a1ada91930496883c40655dff
https://doi.org/10.1016/s0168-9002(97)01272-2
https://doi.org/10.1016/s0168-9002(97)01272-2
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 395:60-64
A model of the radiation hardness of semiconductor detector materials is developed in terms of local charge neutrality (LCN). The non-ionizing energy deposition in GaAs has been calculated for protons with energies ranging from 1 to 25 GeV. Deep cent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7b1503af12ffe8d6c9988004cd1d214
https://doi.org/10.1016/s0168-9002(97)00625-6
https://doi.org/10.1016/s0168-9002(97)00625-6
Autor:
A.V. Smol, A.A Koretski, O. P. Tolbanov, S.S. Khludkov, V.B. Chmill, A. P. Vorobiev, A.I. Potapov, A.V. Chuntonov
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 395:65-70
In this paper we are trying to systemize our experimental data on radiation resistence of GaAs pad detectors doped with chromium and iron.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7e5eca55edac9a1993c5aa2a7bad0bbe
https://doi.org/10.1016/s0168-9002(97)00622-0
https://doi.org/10.1016/s0168-9002(97)00622-0
Publikováno v:
Journal of Physics D: Applied Physics. 29:1559-1563
The concept of radiation hardness of semiconductor materials in terms of local charge neutrality is proposed. Deep centres are invoked to play the basic role in the attainment of radiation hardness by high-resistivity semiconductor charged particle d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97071f43fd5a36d4aeb291fab657cc34
https://doi.org/10.1088/0022-3727/29/6/022
https://doi.org/10.1088/0022-3727/29/6/022
Autor:
G N Statcenko, Y Rastsvetalov, A.V. Chuntonov, A.A Koretski, A. P. Vorobiev, G I Krupnyi, O.P. Tolbanov, A.I. Potapov, S.S. Khludkov, A. A. Yanovich, V.B. Chmill
Publikováno v:
Journal of Physics D: Applied Physics. 28:559-564
The results of studying GaAs samples with built-in pi - nu junctions as the base for the construction of radiation-resistant coordinate-sensitive detectors are presented. The GaAs samples have been exposed to the beam of the linear proton accelerator
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::955e0345a21002d031f742626dae32ce
https://doi.org/10.1088/0022-3727/28/3/017
https://doi.org/10.1088/0022-3727/28/3/017