Zobrazeno 1 - 10
of 27
pro vyhledávání: '"S.R. Glanvill"'
Publikováno v:
Journal of Crystal Growth. 107:632-636
Specular Cd1−yMnyTe epilayers of (100) and (111)B orientation have been grown on 5 cm GaAs (100) and GaAs/Si (100) substrates using dimethyl cadmium, diethyl tellurium and the new organomanganese sources RMn(CO)5 (R = C6H5CH2 or CH3). The manganese
Publikováno v:
Journal of Crystal Growth. 106:673-682
Composition profiles of ultramicrotomed cross sectional samples of epilayers of Hg1-xCdxTe and superlattices grown by MOCVD are measured on a 10 nm scale using an analytical electron microscope. Results compare well with a numerical model for interdi
Autor:
Patrick W. Leech, S.R. Glanvill, S. W. Wilkins, C. J. Rossouw, N. Petkovic, J. Thompson, Martyn H. Kibel, M. S. Kwietniak, P. J. Gwynn, Andrew W. Stevenson, T. J. Elms, Geoff N. Pain, D. Gao, T. Warminski, L. S. Wielunski, C. Sandford, N. Bharatula
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:1067-1077
Specular HgTe–CdTe superlattice epilayers have been obtained on two 2‐in. diam GaAs or sapphire wafers per growth run using a horizontal metalorganic chemical vapor deposition (MOCVD) reactor in which the pyrolysis of the organometallics is induc
Autor:
Andrew W. Stevenson, Martyn H. Kibel, M. S. Kwietniak, D. G. Hay, Ron S. Dickson, Geoff N. Pain, Glen B. Deacon, Bruce O. West, C. J. Rossouw, G. I. Christiansz, Tadeus Warminski, Katherine McGregor, S.R. Glanvill, R. S. Rowe, N. Bharatula, C. Sandford
Publikováno v:
Journal of Crystal Growth. 101:208-210
The new organometallic feedstock MeMn ( CO ) 5 has been used for the MOCVD growth of Cd 1− x Mn x Te (111B) epilayers on GaAs (100) substrates. The epitaxial relationship was established by HRTEM and X-ray diffraction (XRD). The quaternary alloy Hg
Autor:
S.R. Glanvill
Publikováno v:
Proceedings, annual meeting, Electron Microscopy Society of America. 48:428-429
This paper summarizes the application of ultramicrotomy as a specimen preparation technique for some of the Materials Science applications encountered over the past two years. Specimens 20 nm thick by hundreds of μm lateral dimension are readily pre
Autor:
G.N. Pain, C.J. Rossouw, M. S. Kwietniak, S.R. Glanvill, T. Warminski, I. J. Wilson, L. S. Wielwfński
Publikováno v:
Philosophical Magazine Letters. 59:17-23
We demonstrate the application of ultramicrotome techniques for the preparation of thin semiconductor interfaces in cross-section, for analysis by electron beam techniques. This is of significance for semiconductor device technology, since a specific
Publikováno v:
Ultramicroscopy. 26:87-95
Characteristic X-ray emission from unimplanted aluminium is measured under near zone axis diffraction conditions. X-ray emission rates change by factors of 2–3 as the crystal is tilted with respect to a 120 keV incident electron beam. The probabili
Autor:
Stephen E. Donnelly, Amir H. Al-Bayati, J. A. van den Berg, Kevin G. Orrman-Rossiter, D. R. G. Mitchell, S.R. Glanvill, C.J. Rossouw, D.G. Armour, Peter Miller
Publikováno v:
Scopus-Elsevier
Epitaxial crystal growth using an energy- and mass-analysed ion beam can provide insights into the fundamental processes involved in thin-film growth. In these experiments layers of silicon were deposited onto (001) silicon substrates using 30 eV and
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https://explore.openaire.eu/search/publication?articleId=doi_dedup___::81c3380d38e7af89547c2faf97d6669f
http://www.scopus.com/inward/record.url?eid=2-s2.0-0025446099&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0025446099&partnerID=MN8TOARS
Autor:
D. Gao, S. Sulcs, G.N. Pain, C. J. Rossouw, Salvy P. Russo, R. S. Rowe, Ron S. Dickson, M. S. Kwietniak, L. S. Wielunski, S.R. Glanvill, Bruce O. West, Glen B. Deacon, T. Warminski, Robert Elliman, Andrew W. Stevenson
Publikováno v:
Scopus-Elsevier
New organomanganese sources RMn(CO) 5 (e.g. R = CH 3 or C 6 H 5 CH 2 ) have enabled low-temperature MOCVD of Cd 1−x Mn x Te(0 50 cm 2 in a horizontal reactor at atmospheric pressure. Diluted magnetic Cd 1−y Mn y TeCd 1−x Mn x Te strained layer
Externí odkaz:
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http://www.scopus.com/inward/record.url?eid=2-s2.0-0026153266&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0026153266&partnerID=MN8TOARS
Publikováno v:
Scopus-Elsevier
A detailed transmission electron microscopy and EDX study has been carried out on cavities formed in tin by xenon ion implantation. Computer simulation of dark field images has identified thickness fringe contrast due to pyramidal {112} faceting on t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::03e5232f1b65aee8272e29c0471f8899
http://www.scopus.com/inward/record.url?eid=2-s2.0-33845209195&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-33845209195&partnerID=MN8TOARS