Zobrazeno 1 - 10
of 82
pro vyhledávání: '"S.P. Kilcoyne"'
Autor:
M. Haggerott-Crawford, C. R. Abernathy, D. Zhang, R. M. Kolbas, S.P. Kilcoyne, J. M. Zavada, Robert G. Wilson, Randy J. Shul, Stephen J. Pearton, J. D. MacKenzie, J.R. Mileham, Robert N. Schwartz
Publikováno v:
Solid-State Electronics. 41:353-357
Several kinds of nitride-based micro-resonators have been fabricated. Firstly, a microdisk laser structure comprising three InGaN GaN quantum wells on a thick AlN buffer has been grown by metal-organic molecular beam epitaxy and fabricated using a co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bdea8dd271b7bb13f0e22dd357e86799
https://doi.org/10.1016/s0038-1101(96)00244-4
https://doi.org/10.1016/s0038-1101(96)00244-4
Autor:
C. R. Abernathy, S.P. Kilcoyne, M. Hagerott-Crawford, Arnold J. Howard, Randy J. Shul, J.E. Parmeter, Stephen J. Pearton, Catherine Vartuli
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 14:1011-1014
Two broad classes of plasma chemistry were examined for dry etching of GaN, AlN, and InN. The etch rates for CH4/H2‐based plasmas are low (∼ 400 A/min) even under high microwave power (1000 W) electron cyclotron resonance conditions. Halogen‐ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8bc55f5d56371a3809db3a4580ecaaaf
https://doi.org/10.1116/1.580123
https://doi.org/10.1116/1.580123
Autor:
Randy J. Shul, J. D. MacKenzie, S.P. Kilcoyne, Stephen J. Pearton, C. R. Abernathy, Jeffrey Mileham
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 14:836-839
Wet chemical etching of single crystal III–V nitrides has proven difficult in the past due to their excellent stability in corrosive liquids. We have found that KOH‐based solutions provide reaction‐rate limited etching of AlN at rates strongly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::341aa71f913b56d9cb10d41bb3143e15
https://doi.org/10.1116/1.580399
https://doi.org/10.1116/1.580399
Autor:
C. R. Abernathy, Stephen J. Pearton, J.M. Zavada, John C. Zolper, Fan Ren, Robert G. Wilson, M. Hagerott-Crawford, R.G. Schwartz, Randy J. Shul, S.P. Kilcoyne
Publikováno v:
Materials Science and Engineering: B. 38:138-146
Advances in GaN-based electronic and photonic devices requires improved patterning methods, better Ohmic contacts and higher p-type dopong levels. In this paper, new developments in dry and wet etching. Ohmic contacts and epitaxial growth of III–V
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88c927b1ee1428c494b9845efa63c3bf
https://doi.org/10.1016/0921-5107(95)01516-7
https://doi.org/10.1016/0921-5107(95)01516-7
Publikováno v:
IEEE Photonics Technology Letters. 6:778-781
We report advances in the power conversion efficiencies of vertical-cavity top-surface-emitting lasers defined by proton implantation. Efficiencies as high as 13.4% and 15.8% have been obtained for single-mode and multimode operation, respectively. S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e2135dd0484705cd64d26da899d2451
https://doi.org/10.1109/68.311452
https://doi.org/10.1109/68.311452
Autor:
John C. Zolper, Vincent M. Hietala, J.J. Banas, Hong Q. Hou, S.P. Kilcoyne, B. E. Hammons, Kevin L. Lear
Publikováno v:
CLEO '97., Summaries of Papers Presented at the Conference on Lasers and Electro-Optics.
We have previously demonstrated record modulation bandwidths for oxide-confined vertical-cavity surface-emitting lasers (VCSELs) based on strained InGaAs/GaAs quantum wells.1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9abaa37e174facffa034f0cc94fb1e4
https://doi.org/10.1109/cleo.1997.602456
https://doi.org/10.1109/cleo.1997.602456
Autor:
Kevin L. Lear, Jeffrey J. Figiel, J. A. Lott, Kent D. Choquette, Mary H. Crawford, Richard P. Schneider, S.P. Kilcoyne
Publikováno v:
Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics.
Metalorganic vapor phase epitaxy (MOVPE) is used for the growth of vertical-cavity surface-emitting laser (VCSEL) diodes. MOVPE exhibits a number of important advantages over the more commonly-used molecular-beam epitaxial (MBE) techniques, including
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f76e2e1bcfe4ba32311a469bb2cab213
https://doi.org/10.1109/leosst.1994.700529
https://doi.org/10.1109/leosst.1994.700529
Publikováno v:
IEEE Photonics Technology Letters. 8:740-742
Implant and oxide confined vertical-cavity surface-emitting lasers are compared in terms of properties dependent upon the nature of index guiding in the two structures including CW threshold current scaling with size, light-current linearity, pulsed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5237d29cfba09889d55199903408d08
https://doi.org/10.1109/68.502079
https://doi.org/10.1109/68.502079
Autor:
R. M. Kolbas, C. R. Abernathy, J. D. MacKenzie, D. Zhang, S. J. Pearton, J. M. Zavada, Kevin S. Jones, S. Bharatan, J.R. Mileham, V. Krishnamoorthy, M. Hagerott-Crawford, Randy J. Shul, S.P. Kilcoyne
Publikováno v:
Solid-State Electronics. 39:311-313
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ab7bde387628dd0c4c0d06538692896
https://doi.org/10.1016/0038-1101(95)00177-8
https://doi.org/10.1016/0038-1101(95)00177-8
Autor:
J. D. MacKenzie, Cammy R. Abernathy, Stephen J. Pearton, Jeffrey Mileham, S.P. Kilcoyne, Randy J. Shul
Publikováno v:
Applied Physics Letters. 67:1119-1121
Single‐crystal AlN grown on Al2O3 is found to be wet etched by AZ400K photoresist developer solution, in which the active component is KOH. The etching is thermally activated with an activation energy of 15.5±0.4 kcal mol−1, and the etch rate is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::501827795d92328361672f35e21d6389
https://doi.org/10.1063/1.114980
https://doi.org/10.1063/1.114980