Zobrazeno 1 - 10
of 35
pro vyhledávání: '"S.N. Subbarao"'
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 38:1199-1203
The design, fabrication, and evaluation of broadband lateral p-i-n photodetectors monolithically integrated with multistage MESFET amplifiers on GaAs-on-Si are described. Unique features of this approach are that (a) the lateral p-i-n structure is co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9123dcb54f4082b87f087dbbf9467627
https://doi.org/10.1109/22.58643
https://doi.org/10.1109/22.58643
Publikováno v:
Microwave and Millimeter-Wave Monolithic Circuits.
This paper describes the design, fabrication and performance of two monolithic GaAs C-band 900 interdigitated couplers with 50-ohm and 25-ohm impedances, respectively. A comparison of the performance of these two couplers shows thar the 25-ohm couple
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc33a5276e814a9f6746eec4ed716227
https://doi.org/10.1109/mcs.1982.1112180
https://doi.org/10.1109/mcs.1982.1112180
Publikováno v:
11th Annual Gallium Arsenide Integrated Circuit (GaAs IC) Symposium.
The design, fabrication, and evaluation of GaAs-on-Si monolithic, lateral p-i-n photodetectors and MESFET amplifiers are described. The GaAs-on-Si was grown by OMCVD. The low-capacitance p-i-n detectors were fabricated directly on the GaAs high-resis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a9a9d3731ba1438222b3135e7a16540
https://doi.org/10.1109/gaas.1989.69317
https://doi.org/10.1109/gaas.1989.69317
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 31:29-32
This paper deseribes the design, fabrication, and performance of two monolithic GaAs C-band 90° interdlgitiited couplers with 50- and 25-Omega impedances, respectively. A comparison of the performance of' these two couplers shows that the 25-Omega c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6cc30dfbd7fcd7aaff36c71df108238f
https://doi.org/10.1109/tmtt.1983.1131423
https://doi.org/10.1109/tmtt.1983.1131423
Publikováno v:
Materials Research Bulletin. 13:125-128
New, skutterudite-related compounds IrGe 1.5 S 1.5 , IrGe 1.5 Se 1.5 , IrSn 1.5 S 1.5 , and RhGe 1.5 S 1.5 were prepared by direct combination of the elements at 800°C under conditions of ambient pressure, or by heating the partially reacted element
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e177d886612325ea6d1a675ee657887a
https://doi.org/10.1016/0025-5408(78)90076-4
https://doi.org/10.1016/0025-5408(78)90076-4
Publikováno v:
Inorganic Chemistry. 18:488-492
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b005fc240c22a7d3c3028e678d276df
https://doi.org/10.1021/ic50192a064
https://doi.org/10.1021/ic50192a064
Publikováno v:
Journal of Solid State Chemistry. 26:111-114
Crystals of antimony-doped In2Se3 were grown by the Bridgeman method. This compound, whose composition is In1.8Sb0.2Se3, appears to be isostructural with In1.9As0.1Se3. The refined unit cell parameters are a = 3.97(1), c = 18.87(1) A. Orthorhombic cr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6cc1484e38f663e171840c87781addc
https://doi.org/10.1016/0022-4596(78)90140-8
https://doi.org/10.1016/0022-4596(78)90140-8
Publikováno v:
Materials Research Bulletin. 13:1461-1467
The system TiO 2−x has been prepared and its photoelectric properties have been characterized as a function of x. A comparison is made between the members of the systems TiO 2−x and TiO 2−x F x . The role of vacancies is discussed in connection
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16c82bbbc285177ebddd0317900ef707
https://doi.org/10.1016/0025-5408(78)90140-x
https://doi.org/10.1016/0025-5408(78)90140-x
Publikováno v:
Journal of Solid State Chemistry. 34:231-239
Cd2GeO4 has been prepared from CdO and GeO2 by solid state reaction at 850°C as a low resistivity (ϱ ⋍ 1 Ω · cm) n-type semiconductor. Its conductivity is increased by doping with trivalent metal ions and decreased by heating oxygen. The electr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e057b66fb70b3bbdc867f60d34ae273
https://doi.org/10.1016/0022-4596(80)90226-1
https://doi.org/10.1016/0022-4596(80)90226-1
Publikováno v:
Journal of Solid State Chemistry. 33:27-32
The two alkaline earth niobates Sr2Nb2O7 and Ba0.5Sr0.5Nb2O6 have been prepared, their electronic properties measured, and their photoresponses compared. The indirect band gap in Sr2Nb2O7 is 3.86 eV compared with 3.38 eV for Ba0.5Sr0.5Nb2O6. Hence, p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66ead197eb73c1fa93587055513672b8
https://doi.org/10.1016/0022-4596(80)90544-7
https://doi.org/10.1016/0022-4596(80)90544-7