Zobrazeno 1 - 10
of 60
pro vyhledávání: '"S.N. Bunker"'
Publikováno v:
Surface and Coatings Technology. 83:183-188
Polished substrates of 52100 steel were implanted with 150 keV Ta+ or Nb+ to a dose of 2 × 1017 ions cm−2 with the target chamber at best vacuum (approximately 5 × 10−7 Torr) or with the chamber backfilled with oxygen to pressures of 1, 5, or 1
Publikováno v:
Thin Solid Films. 278:87-95
A method of thin film growth by ion implantation into a medium of liquid metal is presented. Thin layers of aluminum and indium deposited on silicon and silicon carbide (6H-type) substrates were liquified and implanted with carbon ions (at 190 keV).
Autor:
A.J. Armini, S.N. Bunker
Publikováno v:
Surface and Coatings Technology. 66:340-344
Ion implantation of metals and non-metals is a recognized method for creating surface alloys and buried layers with unique and desirable properties. However, surface sputtering during implantation limits the maximum achievable atomic concentration to
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 6:94-99
The performance of a dedicated low energy (5–20 keV) non-mass-analyzed solar cell ion implanter is described. Using a new high throughput system, up to 600 4″ silicon wafers are processed per hour. Design features that yield an implant uniformity
Publikováno v:
Materials Science and Engineering. 90:385-397
The U.S. Navy supported a manufacturing technology program to evaluate the potential of ion implantation for industrial-scale treatment of components for wear and corrosion protection. In this paper the overall project is described, the experiments c
Autor:
A.J. Armini, S.N. Bunker
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 6:214-218
Research in the implantation of metal ions has been shown to produce improved surface properties for a wide variety of ion species and materials. Except for the case of gaseous source materials, such as nitrogen, little attempt has been made to advan
Autor:
A.J. Armini, S.N. Bunker
Publikováno v:
Materials Science and Engineering: A. 115:67-71
During very high dose ion implantation, the influence of high concentrations of the ion species in the substrate makes the calculation of the final concentration profile very difficult. A concentration depth profile modeling program has been written
Autor:
A.J. Armini, S.N. Bunker
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 39:7-10
Very high dose ion implantation has been used to form stoichiometric quantities of buried compounds and alloys. Examples of these applications include silicon-on-insulator, buried conductors and the creation of new surface alloys with metal beams. Th
Autor:
J. W. Leonard, K. I. Roulston, D. O. Wells, I. F. Bubb, A. McIlwain, S.N. Bunker, B. G. Whitmore, Mahavir Jain, K. G. Standing
Publikováno v:
Canadian Journal of Physics. 52:648-654
Neutron total cross sections have been measured in the energy range of 20 to 45 MeV for Be, C, Al, Cu, and Zn. The typical accuracy was 1% to 2%. Results are compared with optical model calculations in which the only variable is the surface absorptio
Autor:
C. A. Miller, D. O. Wells, K.H. Bray, S.N. Bunker, W. T. H. van Oers, K.S. Jayaraman, J. M. Nelson, Mahavir Jain
Publikováno v:
Canadian Journal of Physics. 51:1012-1016
A study of the 40Ca(p,2p)39K reaction has been made for two states of 39K, the 1d3/2−1(g.s.) and 2s1/2−1(2.53 MeV). Angular correlations at symmetric, coplanar angles between 30 and 105° have been measured. The data are compared with a distorted