Zobrazeno 1 - 10
of 41
pro vyhledávání: '"S.M.J. Liu"'
Publikováno v:
IEEE Journal of Solid-State Circuits. 35:1298-1306
This paper describes the design, fabrication, and measurement of a wideband 60 GHz monolithic microwave integrated circuit (MMIC) power amplifier that has demonstrated via on-wafer continuous wave (CW) measurement a record 43% power-added efficiency
Autor:
O.S.A. Tang, Patrick M. Smith, S.M.J. Liu, T.J. Rogers, K.H.G. Duh, D.J. Pritchard, W.F. Kopp
Publikováno v:
IEEE Journal of Solid-State Circuits. 32:1326-1333
This work describes the design and nonlinear modeling of two V-band monolithic microwave integrated circuit (MMIC) power amplifiers using a nonlinear high electron mobility transistor (HEMT) model developed specifically for very short gate length pse
Publikováno v:
2008 Asia-Pacific Microwave Conference.
A production ready pseudomorphic high electron mobility transistor (pHEMT) using i-line 0.25 mum optical gate lithography has been developed for both Ka- and Ku-band power applications. These 0.25 mum Ka- and Ku-version pHEMT devices demonstrate stat
Publikováno v:
2008 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems.
The gate geometry of PHEMT determines the upper limit in microwave and millimeter-wave frequencies at which the transistor can be optimally useful as amplifiers. In addition to production of 0.5 mum and 0.15 mum feature gate length PHEMT on 150 mm Ga
Autor:
A.A. Jabra, K.H.G. Duh, P. Ho, A. Tessmer, J.M. Ballingall, P.M. Smith, M.Y. Kao, S.M.J. Liu, P.C. Chao
Publikováno v:
IEEE Electron Device Letters. 11:59-62
Very low-noise 0.15- mu m gate-length W-band In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As/InP lattice-matched HEMTs are discussed. A maximum extrinsic transconductance of 1300 mS/mm has been measured for the device
Publikováno v:
52nd Annual Device Research Conference.
Publikováno v:
IEEE Microwave and Guided Wave Letters. 5:230-232
We have developed 0.1-/spl mu/m gate-length InAlAs-InGaAs-InP power HEMT's with record efficiency and power gain at 94 GHz. A 200 /spl mu/m gate-width device has produced 58 mW output power with 6.4 dB power gain and 33% power-added efficiency. The e
Publikováno v:
IEEE Microwave and Guided Wave Letters. 5:201-203
We report the development of a V-band monolithic power amplifier based on 0.1 /spl mu/m gate-length pseudomorphic HEMT's. The two-stage amplifier has demonstrated record performance at 60 GHz on the first design pass: 272 mW output power with 9.4 dB
Publikováno v:
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369).
This paper reports our development of a monolithic InP HEMT based power amplifier showing state-of-the-art V-band performance. A single-stage amplifier with a 600 um cell periphery demonstrated 224 mW of output power at the peak power-added efficienc
Publikováno v:
1992 IEEE Microwave Symposium Digest MTT-S.
The performance of a 7-11-GHz LNA (low-noise amplifier) MIC (monolithic microwave integrated circuit) which advances performance and integration standards is presented. A 1.8-dB noise figure (NF), 19-dB-gain LNA is coupled with a 0.5-dB insertion los