Zobrazeno 1 - 10
of 257
pro vyhledávání: '"S.M. Wasim"'
Publikováno v:
Orbital: The Electronic Journal of Chemistry, Vol 13, Iss 3, Pp 236-240 (2021)
This work focuses on the preparation and structural characterization of the semiconductor Cu3In5Se9, an important member of ordered vacancy compounds family, belonging to the semiconductor system I3-III5--VI9, where denotes the cation vacancy which i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a3da484cfba13f7dec976568d78753b8
https://doi.org/10.17807/orbital.v13i3.1560
https://doi.org/10.17807/orbital.v13i3.1560
Autor:
Lahcen Essaleh, C. Rincón, Javier Enríquez, G. Marín, Dinesh Pratap Singh, S.M. Wasim, Gerzon E. Delgado
Publikováno v:
Journal of Electronic Materials. 49:419-428
The optical absorption coefficient α and electrical conduction as a function of temperature of the semiconductor Cu3In5Se9, an ordered defect compound which crystallizes in a tetragonal structure with space group P$$ \bar{4} $$2c, have been studied.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3345cb2b6a2356d92e7b048c0b3b920
https://doi.org/10.1007/s11664-019-07816-0
https://doi.org/10.1007/s11664-019-07816-0
Publikováno v:
Physica B: Condensed Matter. 565:14-17
In this report, the ternary chalcopyrite semiconductor n-CulnSe2 (n-CIS112) was studied using impedance spectroscopy (IS) over a wide range of temperatures [80 K, 300 K] and frequencies [20 Hz, 1 MHz]. The ingot was grown by vertical Bridgman techniq
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a41b40c19a714e52da0de42e1ed9529
https://doi.org/10.1016/j.physb.2019.04.028
https://doi.org/10.1016/j.physb.2019.04.028
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 99:37-42
In the present work, an attempt has been made to study theoretically and experimentally the AC electrical conduction mechanism in disordered semiconducting materials. The key parameter considered in this analysis is the frequency exponent s ( ω , T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ac8a2fc3122303f9492f32405c556c7
https://doi.org/10.1016/j.physe.2018.01.012
https://doi.org/10.1016/j.physe.2018.01.012
Autor:
Carlos Duarte, S.M Wasim
Publikováno v:
Revista Técnica de la Facultad de Ingeniería, Vol 18, Iss 2 (2011)
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Externí odkaz:
https://doaj.org/article/47690378090e494b8e21a75118fef00a
Autor:
S. Belhouideg, Rachid Bouferra, M. Essaleh, Lahcen Essaleh, A. Bourezza, G. Marín, S.M. Wasim, A. Bouchehma, S. Amhil
Publikováno v:
Physica B: Condensed Matter. 622:413356
This paper presents the frequency dielectric measurements of the N type ternary semiconductor compound of Cu5In9Se16 in order to analyze the mechanisms of charge transport and dielectric losses. The universal laws of Elliot and Jonscher are used to i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b70699ba6246e4672d2a248bca7bc782
https://doi.org/10.1016/j.physb.2021.413356
https://doi.org/10.1016/j.physb.2021.413356
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Publikováno v:
Journal of Alloys and Compounds. 688:210-215
Both complex impedance and electric modulus formalisms are considered to study the contribution of dominant electrical conduction mechanisms in bulk p-type CuIn 3 Se 5 semiconductor. An equivalent electrical circuit has been proposed to explain the i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbf0f1e173de800350334f71c339ad91
https://doi.org/10.1016/j.jallcom.2016.07.183
https://doi.org/10.1016/j.jallcom.2016.07.183
Publikováno v:
Superlattices and Microstructures. 92:353-358
In this work, ac electrical conductivity measurements were studied for the first time in p type bulk ternary semiconductor compound CuIn3Se5. The dynamic electrical conductivity is analyzed in the frequency range 20 Hz to 1 MHz and temperature from 3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2fa63d9b79a27c2d32b812123a2082b
https://doi.org/10.1016/j.spmi.2016.02.044
https://doi.org/10.1016/j.spmi.2016.02.044
Publikováno v:
Materials Letters. 186:155-157
The crystal structure of the ordered defect compound Cu3In5Te9, which has recently emerged as an excellent candidate for thermoelectric applications, was refined by the Rietveld method using X-ray powder diffraction data. It was established that this
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::715943ce67f20bc1cc414ab40f5047e6
https://doi.org/10.1016/j.matlet.2016.09.122
https://doi.org/10.1016/j.matlet.2016.09.122