Výsledky vyhledávání

Calibration of MEMS-based test structures for predicting thermomechanical stress in integrated circuit interconnect structures

Autor: Steve Bull, Nicholas G. Wright, Kai Wang, S.M. Soare, J.M.M. dos-Santos, Jonathan G. Terry, J.T.M. Stevenson, Alton B. Horsfall, Anthony O'Neill, Anthony J. Walton, Alan M. Gundlach, J.C.P. Pina

Publikováno v: IEEE Transactions on Device and Materials Reliability. 5:713-719

This paper uses a rotating-beam-sensor structure to show that the extrinsic stress from the mismatch in expansion coefficient between the aluminum and the silicon substrate dominates over the compressive stress from the sputter growth. Sintering the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8bf871081bdb24841a6580b4940b9eb0
https://doi.org/10.1109/tdmr.2005.857218

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Sensitivity of a Rotating Beam Sensor for Stress Evaluation in Aluminium Thin Films

Autor: S.M. Soare, Anthony O'Neill, Jonathan G. Terry, J.C.P. Pina, J.M.M. dos Santos, Alton B. Horsfall, Steve Bull, Anthony Walton, Alan M. Gundlach, Kai Wang, António Castanhola Batista, J.T.M. Stevenson, Nicolas G. Wright

Publikováno v: Materials Science Forum. :649-654

The evaluation of stress in sub-micron tracks is critical for the microelectronics industry and there is a need for new methods of measurement. This paper advocates the use of a rotating beam sensor structure which can be fabricated on the wafer alon

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b15d348dbb4fbad7648f5f62d371846f
https://doi.org/10.4028/www.scientific.net/msf.490-491.649

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Test Chip for the Development and Evaluation of Sensors for Measuring Stress in Metal Interconnects

Autor: Stewart Smith, S.M. Soare, Steve Bull, Jonathan G. Terry, Nicholas G. Wright, Kai Wang, Anthony O'Neill, Alton B. Horsfall, J.M.M. dos Santos, J.T.M. Stevenson, Anthony J. Walton, Alan M. Gundlach

Publikováno v: IEEE Transactions on Semiconductor Manufacturing. 18:255-261

The development of a new test chip is presented, containing structures for the direct measurement of stress in metallic interconnect layers associated with silicon integrated circuit technology. The rotation of the structures provides a simple method

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a9e1ad989db22149b22de4903771f6f5
https://doi.org/10.1109/tsm.2005.845096

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Dependence of Process Parameters on Stress Generation in Aluminum Thin Films

Autor: J.M.M. dos-Santos, Jonathan G. Terry, Nicholas G. Wright, Anthony O'Neill, Kai Wang, Alan M. Gundlach, J.T.M. Stevenson, Anthony J. Walton, Steve Bull, S.M. Soare, Alton B. Horsfall

Publikováno v: IEEE Transactions on Device and Materials Reliability. 4:482-487

The dependence of residual stress on the process parameters for aluminum metallization has been studied using a rotating beam sensor. This shows increasing tensile stress with both the target power and ambient pressure used during the sputter deposit

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::85ae20351b2f2e9084e2daca8d7eab52
https://doi.org/10.1109/tdmr.2004.829389

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Nanoindentation assessment of aluminium metallisation; the effect of creep and pile-up

Autor: S.M. Soare, A.G. O'Neil, Nicholas G. Wright, Steve Bull, J.M.M. dos Santos, Alton B. Horsfall

Publikováno v: Surface and Coatings Technology. :497-503

As miniaturisation of microelectronic devices continues, the metallisation connecting components has smaller and smaller dimensions, especially width and thickness. The mechanical properties of the deposited metal are very different from those of bul

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::232eb19a0ab4b08adc9e3701fa6f205e
https://doi.org/10.1016/s0257-8972(03)00918-6

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Direct measurement of residual stress in sub-micron interconnects

Autor: Anthony O'Neill, S.M. Soare, J.T.M. Stevenson, J.M.M. dos Santos, Steve Bull, Alton B. Horsfall, Alan M. Gundlach, Nicholas G. Wright, Anthony J. Walton

Publikováno v: Semiconductor Science and Technology. 18:992-996

The process-induced stress in interconnect structures in modern integrated circuits has a direct influence on the mean time to failure for the device. As the active devices are aggressively scaled to meet the constant demands of the industry, the int

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d004f3a7010ae4b232958817e4ce6835
https://doi.org/10.1088/0268-1242/18/11/315

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Calibration and optimization of interconnect based MEMS test structures for predicting thermo-mechanical stress in metallization

Autor: Steve Bull, Anthony O'Neill, J.M.M. dos Santos, J. Pina, Kai Wang, Alton B. Horsfall, Jonathan G. Terry, S.M. Soare, Nicholas G. Wright, Anthony J. Walton, Alan M. Gundlach, J.T.M. Stevenson

Publikováno v: 2004 IEEE International Reliability Physics Symposium. Proceedings.

We have shown that the in-plane stress in aluminium metallisation can be observed using a rotating beam sensor structure. This shows that the extrinsic stress from the mismatch in expansion coefficient between the aluminium and the silicon substrate

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4168f7d28820d17dda84b8d865f034e2
https://doi.org/10.1109/relphy.2004.1315333

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Test chip for the development and evaluation of test structures for measuring stress in metal interconnect

Autor: Alan M. Gundlach, J.M.M. dos Santos, Jonathan G. Terry, Anthony J. Walton, Stewart Smith, Steve Bull, Kai Wang, Alton B. Horsfall, Nicholas G. Wright, J.T.M. Stevenson, S.M. Soare, Anthony O'Neill

Publikováno v: Proceedings of the 2004 International Conference on Microelectronic Test Structures (IEEE Cat. No.04CH37516).

The development of a new test chip is presented, which contains the first test devices able to directly measure stress in metallic interconnect layers associated with silicon IC technology. The rotation of the structures provides a simple method of d

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::68383edba7f081cc108578b5acb551c7
https://doi.org/10.1109/icmts.2004.1309304

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