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pro vyhledávání: '"S.M. Newstead"'
Akademický článek
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Akademický článek
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Autor:
J.E. Castle, S.M. Newstead, John F. Watts, H.D. Liu, Terry E. Whall, P.L.F. Hemment, R. A. Kubiak, Evan H. C. Parker, J.P. Zhang
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 96:281-285
The thermal stability of GeO2 formed by oxygen implantation into Si0.5Ge0.5 alloy has been investigated and quantified. The sample used in this experiment consisted of a 900 nm relaxed layer of Si0.5Ge0.5 alloy capped with 78 nm of silicon which was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71d6160ca1fd133342899dabb1d920d6
https://doi.org/10.1016/0168-583x(94)00500-1
https://doi.org/10.1016/0168-583x(94)00500-1
Publikováno v:
Thin Solid Films. 222:141-144
We have studied the oxidation behaviour of 350 nm thick films of Si 0.5 Ge 0.5 alloy grown on Si(100) substrates by molecular beam epitaxy. The oxidation was performed at 1000 °C in both dry and wet oxygen environments. As a reference, bulk silicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::690f7510aad6960fc1ada2acc8d356f8
https://doi.org/10.1016/0040-6090(92)90055-g
https://doi.org/10.1016/0040-6090(92)90055-g
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 72:442-446
SIMS response functions and depth resolution parameters have been measured using O 2 + primary ions at normal incidence and 45°, for a range of silicon MBE grown epilayers containing ultrathin buried layers or “deltas” doped with B. Growth and d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67af0009e62ddcaa57afb11b9aca1078
https://doi.org/10.1016/0168-583x(92)95140-m
https://doi.org/10.1016/0168-583x(92)95140-m
Autor:
Jing Zhang, Terry E. Whall, P.L.F. Hemment, A.R. Powell, Evan H. C. Parker, N. Hatzopoulos, S.M. Newstead
Publikováno v:
Materials Science and Engineering: B. 12:21-26
Si 0.57 Ge 0.43 alloy layers implanted with O + ions have been investigated by Rutherford backscattering spectrometry. The layers of 550 nm thickness were grown by molecular beam epitaxy on a n-type (100) Si substrate (ϱ = 5–20 Ω cm) . The sample
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cee23bfffe562d53498fe34056a29ea0
https://doi.org/10.1016/0921-5107(92)90253-6
https://doi.org/10.1016/0921-5107(92)90253-6
Publikováno v:
Journal of Applied Physics. 71:118-125
Boron doped layers were grown by silicon molecular beam epitaxy to establish incorporation processes at temperatures between 900 and 450 °C. For temperatures exceeding 650 °C a surface accumulated phase of boron was formed when doping levels exceed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10d628f339f75e26257fbe234eec3706
https://doi.org/10.1063/1.351363
https://doi.org/10.1063/1.351363
Autor:
H.D. Liu, J.P. Zhang, P.L.F. Hemment, S.M. Newstead, A.R. Powell, Evan H. C. Parker, J.E. Castle, Terry E. Whall, John F. Watts
Publikováno v:
Materials Science and Engineering: B. 12:199-203
A Si0.5Ge0.5 alloy layer was implanted at a temperature of about 500 °C with doses of 0.6 × 1018, 1.2 × 1018 and 1.8 × 1018 O+ cm−2 at an energy of 200 keV. The alloy layer was prepared by molecular beam expitaxy (MBE), with an 800 nm thick fil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44572f8e306ae328e70ec1dc5f9f2c9e
https://doi.org/10.1016/0921-5107(92)90286-i
https://doi.org/10.1016/0921-5107(92)90286-i
Autor:
A.R. Powell, Evan H. C. Parker, L. M. Brown, William T. Pike, S.M. Newstead, R. A. Kubiak, Terry E. Whall
Publikováno v:
Journal of Crystal Growth. 111:925-930
The nanometre scale of the novel strained layer electronic devices now being grown requires characterisation techniques of a corresponding resolution. This work employs the subnanometre probe of a dedicated scanning transmission electron microscope t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34d63d17e79c6a432c10875dc8e45887
https://doi.org/10.1016/0022-0248(91)91109-n
https://doi.org/10.1016/0022-0248(91)91109-n
Autor:
David Bowen, Evan H. C. Parker, E. Başaran, A.R. Powell, T. Naylor, J. C. Brighten, N. L. Mattey, D. W. Smith, Terry E. Whall, R. D. Barlow, S.M. Newstead, M.G. Dowsett, C. J. Emeleus, C. P. Parry, R. A. Kubiak
Publikováno v:
Journal of Crystal Growth. 111:907-911
This paper considers the low temperature doping of (100) Si and SiGe structures with elemental B and Sb sources particularly with regard to obtaining very narrow delta doping spikes. B is found to be an excellent dopant at SiGe growth temperatures in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::172ff25ce43f221caec12e9c3917a655
https://doi.org/10.1016/0022-0248(91)91105-j
https://doi.org/10.1016/0022-0248(91)91105-j