Zobrazeno 1 - 10
of 29
pro vyhledávání: '"S.M. Lardizabal"'
Autor:
C.S. Whelan, C. Xu, R.E. Leoni, Jae-Hyung Jang, P.F. Marsh, William E. Hoke, Y. Zhang, Ilesanmi Adesida, A. Torabi, T. D. Kennedy, K. C. Hsieh, S.M. Lardizabal
Publikováno v:
Journal of Crystal Growth. 251:804-810
Metamorphic layer structures grown on GaAs substrates have been characterized and fabricated into high quality electrical and optical devices. The root mean square surface roughness of the metamorphic films is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df2272d2578368027d998b1a578ae63a
https://doi.org/10.1016/s0022-0248(02)02374-6
https://doi.org/10.1016/s0022-0248(02)02374-6
Autor:
Thomas E. Kazior, P.F. Marsh, C.S. Whelan, Iii. R.E. Leoni, S.J. Lichwala, W. E. Hoke, P. J. Lemonias, S.M. Lardizabal, P. Lyman, R.A. McTaggart
Publikováno v:
IEEE Journal of Solid-State Circuits. 35:1307-1311
This paper reports on state of-the-art HEMT devices and circuit results utilizing 32% and 60% indium content InGaAs channel metamorphic technology on GaAs substrates. The 60% In metamorphic HEMT (MHEMT) has achieved an excellent 0.61-dB minimum noise
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0992f9e74ff0157ca54b0b447bb9b583
https://doi.org/10.1109/4.868040
https://doi.org/10.1109/4.868040
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 45:46-51
A new algorithm is presented for construction of accurate table-based bias and temperature dependent field-effect transistor (FET) small-signal and noise models. The algorithm performs two-dimensional (2-D) linear interpolation on a single stored dat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f23aed26b30743313fc430473ed8a1af
https://doi.org/10.1109/22.552031
https://doi.org/10.1109/22.552031
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 44:357-363
A complete temperature-dependent small signal model extraction methodology is used to achieve accurate circuit level simulations of metal semiconductor field-effect transistor (MESFET) amplifier performance over temperature. The procedure applies a p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6cb392ac928a2da9c64c629d0924a2b
https://doi.org/10.1109/22.486144
https://doi.org/10.1109/22.486144
Autor:
R.E. Leoni, P. J. Lemonias, S. Kang, R. Wohlert, R.A. McTaggart, S.M. Lardizabal, C.S. Whelan, P.M. McIntosh, William E. Hoke, Thomas E. Kazior, P.F. Marsh
Publikováno v:
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369).
An excellent 0.61 dB minimum noise figure and 11.8 dB associated gain at 26 GHz, have been obtained for a InAlAs/InGaAs metamorphic HEMT on a GaAs substrate. Low-noise amplifiers show under 1.8 dB noise figure with gain greater than 24 dB across 27-3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::003f03e0f28a38d535a496c15f72e47b
https://doi.org/10.1109/gaas.1999.803762
https://doi.org/10.1109/gaas.1999.803762
Autor:
Thomas E. Kazior, P.M. McIntosh, R. Wohlert, P. J. Lemonias, William E. Hoke, R.E. Leoni, S.M. Lardizabal, S.L.G. Chu, R.A. McTaggart, P.F. Marsh, C.S. Whelan, A.M. Bowlby, S. Kang
Publikováno v:
1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282).
Excellent noise (0.41 dB minimum noise figure with 11.5 dB associated gain at 18 GHz) and linearity (third order intercept point of 37.6 dBm at 42.5 mW DC power giving a linearity figure of merit (LFOM) of 137) have been obtained for InAlAs-InGaAs me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21deb027fdb81222627a9f50e874e66a
https://doi.org/10.1109/mwsym.1999.779435
https://doi.org/10.1109/mwsym.1999.779435
Publikováno v:
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369).
This work developed a distributed PHEMT model for small signal S-parameter simulation. Distributed effects due to feed metalization were compared for a wide range of measured PHEMT geometries. Agreement between measured and modeled results was achiev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d72acf99ea0dd22c8ec2a47b80977a5
https://doi.org/10.1109/gaas.1999.803744
https://doi.org/10.1109/gaas.1999.803744
Publikováno v:
1996 IEEE MTT-S International Microwave Symposium Digest.
A systematic experimental investigation of FET noise models illustrates bias and temperature dependencies that help to explain differences between two prevalent models. Observations concerning the bias dependence of the popular temperature based nois
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e753320d1070cb699653cc2a0e485ba
https://doi.org/10.1109/mwsym.1996.512180
https://doi.org/10.1109/mwsym.1996.512180
Publikováno v:
1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).
A general temperature dependent noise equivalent circuit parameter modeling procedure for MESFETs and PHEMTs is described. The noise source variations are fitted to linear functions of temperature over the 25 to 100/spl deg/C range. The originality o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07ee086594f386c0095e093edc604203
https://doi.org/10.1109/mwsym.1994.335225
https://doi.org/10.1109/mwsym.1994.335225
Publikováno v:
Proceedings of 1995 IEEE MTT-S International Microwave Symposium.
A new algorithm is presented for construction of an accurate table-based bias and temperature dependent FET small-signal and noise model. The algorithm provides orders of magnitude data reduction over the alternate approach of storing multiple S-para
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fae02312a2418ab09b6a7e1df7d0a90
https://doi.org/10.1109/mwsym.1995.405929
https://doi.org/10.1109/mwsym.1995.405929