Zobrazeno 1 - 10
of 37
pro vyhledávání: '"S.M. Galkin"'
Applications that utilize scintillation detectors at low temperatures are growing in number. Many of these require materials with high light yield and a fast response. Here we report on the low-temperature characterisation of ZnSe doped with Al or Te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::788a8367e0bf42f2b966095218f45871
Autor:
S.M. Galkin, O. M. Chugai, O. O. Voloshin, L. Iu. Sidelnikova, O. O. Sosnytska, S. V. Oliynik
Publikováno v:
Integrated Computer Technologies in Mechanical Engineering ISBN: 9783030376178
The features of changes in the real and imaginary parts of the complex permittivity of the samples with CdZnTe crystallites in the frequency range 10–103 Hz of the electric field in the absence of exposure to electromagnetic radiation are obtained.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f255c15acad4fc8a3223966d9ec450c8
https://doi.org/10.1007/978-3-030-37618-5_13
https://doi.org/10.1007/978-3-030-37618-5_13
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 1014:165704
The design and technological scheme of alpha particle detectors based on crystal granules of ZnSe–Al were developed. We have found that the ZnSe–Al semiconductor scintillator has a number of advantages compared to the ZnS–Ag namely the terms of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cbb9401a4e5dceb95f02ca8e924a741
https://doi.org/10.1016/j.nima.2021.165704
https://doi.org/10.1016/j.nima.2021.165704
Autor:
S.M. Galkin, V. P. Rudyk, M. Rudko, A. Hrytsak, V. B. Kapustianyk, V.B. Mikhailik, H. Kraus, M. Panasiuk, V.M. Mokina
Publikováno v:
Journal of Luminescence. 188:600-603
The X-ray luminescence and scintillation properties of undoped ZnTe crystal were investigated as function of temperature down to T130Te.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ae3ca8cf8721109b5f9c1e247c1b2e77
https://doi.org/10.1016/j.jlumin.2017.05.021
https://doi.org/10.1016/j.jlumin.2017.05.021
Publikováno v:
Nauka ta Innovacii, Vol 12, Iss 6, Pp 39-48 (2016)
The technology of flexible panels and dispersed scintillation elements for X-rays registration with high uniformity of scintillation parameters (mean deviation no more than 2%) and low cost is developed. Parameters of flexible scintillation panels ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::307937079d6ab6402a5096350c354aac
https://doi.org/10.15407/scine12.06.037
https://doi.org/10.15407/scine12.06.037
Autor:
M. Rudko, A. Hrytsak, S.M. Galkin, M. Panasiuk, V. P. Rudyk, R. Gamernyk, V. B. Kapustianyk, H. Kraus, V.B. Mikhailik
Publikováno v:
Scopus-Elsevier
The paper is devoted to the study of X-ray luminescence spectra, the scintillation light output and the decay time characterisation of undoped ZnTe at low temperatures down to 6 K. Also, the photoconductivity spectrum in a visible region has been inv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a1e4b3fc07fce94f7a68f04a6ddc7a5d
http://ora.ox.ac.uk/objects/uuid:
http://ora.ox.ac.uk/objects/uuid:
Publikováno v:
Semiconductor Physics Quantum Electronics and Optoelectronics. 16:140-145
The process of chemical polishing the undoped and doped ZnSe crystals surface with H₂O₂ – HBr etchants has been studied. The dependence of the samples polishing rate on the concentration of H₂O₂ in HBr solution has been investigated. Surfac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9d40aea10ec8dbc2eaa0922128e0b36d
https://doi.org/10.15407/spqeo16.02.140
https://doi.org/10.15407/spqeo16.02.140
Publikováno v:
Journal of Crystal Growth. 364:111-117
Problems related to the development of physico-technological foundations of preparation of scintillation materials on the basis of zinc selenide with AIIBVI isovalent dopants, as well as complex studies of properties of new semiconductor scintillator
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82839a57581c5b0b0e8194f562498bd4
https://doi.org/10.1016/j.jcrysgro.2012.11.034
https://doi.org/10.1016/j.jcrysgro.2012.11.034
Autor:
Vladimir Perevertaylo, Olena K. Lysetska, S.M. Galkin, I.M. Zenya, Oleksandr D. Opolonin, Anatoly B. Rosenfeld, G.M. Onyshchenko, L. A. Piven, E. F. Voronkin, Vladimir D. Ryzhikov
Publikováno v:
Radiation Measurements. 46:1666-1670
In this work, main characteristics are considered of photosensitive Schottky diode structures – n-type ZnSe(Te,X)/Ni, where Х = O or Al, which are promising as ultraviolet radiation detectors in the 200–480 nm range. The Schottky barrier-based s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4eaa902798e9578f3fac1fe804905ce2
https://doi.org/10.1016/j.radmeas.2011.06.033
https://doi.org/10.1016/j.radmeas.2011.06.033
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