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pro vyhledávání: '"S.M. Bishop"'
Akademický článek
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Publikováno v:
Journal of Materials Research. 27:3110-3116
Resistive memory devices have the potential to replace flash technology due to their increased scalability, low voltage of operation, and compatibility with silicon semiconductor manufacturing. We report a spin-on resistive switching material, hydrog
Publikováno v:
Applied Surface Science. 255:6535-6539
The spatial origins of emissions from homoepitaxial 4H-SiC( 1 1 2 ¯ 0 ) films have been investigated by cathodoluminescence, secondary ion mass spectrometry, and electron trajectory simulations. At 15 keV (300 K), the spectrum contained three peaks.
Akademický článek
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Autor:
Ji-Soo Park, C.L. Reynolds, F.A. Stevie, S.M. Bishop, C.W. Ebert, Y. Uprety, Robert F. Davis, Zuzanna Liliental-Weber
Publikováno v:
Journal of Crystal Growth. 311:72-78
Homoepitaxial growths of 4H-SiC(1 1 2¯ 0) epitaxial layers have been achieved using chemical vapor deposition from 1250 to 1600 °C and two process routes: (1) with and (2) without the addition of SiH4 and C2H4 to the growth ambient. An activation e
Autor:
Robert F. Davis, Minseo Park, S.M. Bishop, Y. Uprety, D.E. Barnhardt, J.C. Molstad, C. L. Reynolds, Tangali S. Sudarshan, A. Shrivastava, D. Wang, Zuzanna Liliental-Weber, J. Zhu
Publikováno v:
Journal of Electronic Materials. 36:285-296
The polytype and surface and defect microstructure of epitaxial layers grown on 4H( $$ {\hbox{11}}\overline{{\hbox{2}}} {\hbox{0}} $$ ), 4H(0001) on-axis, 4H(0001) 8° off-axis, and 6H(0001) on-axis substrates have been investigated. High-resolution
Autor:
J. Gu, D.A. Batchelor, Ji-Soo Park, S.M. Bishop, Zuzanna Liliental-Weber, B. Wagner, Z. J. Reitmeier, D. N. Zakharov, Robert F. Davis
Publikováno v:
Journal of Crystal Growth. 300:83-89
The initial and subsequent stages of growth of AlN on 4H–SiC (1 1 2¯ 0) and GaN on AlN (1 1 2¯ 0) have been investigated using atomic force microscopy and X-ray photoelectron spectroscopy. The AlN nucleated and grew via the Stranski–Krastanov m
Autor:
Ji-Soo Park, Patrick Wellenius, John F. Muth, S.M. Bishop, Robert F. Davis, Daryl W. Fothergill
Publikováno v:
Japanese Journal of Applied Physics. 45:4083-4086
The effects of p-GaN capping layer and p-type carrier-blocking layer on the occurrence of parasitic emissions from 353 nm AlGaN-based light emitting diodes (LEDs) have been investigated. LEDs without a p-type Al0.25Ga0.75N carrier-blocking layer show
Publikováno v:
Composite Structures. 36:187-207
In studies aimed at understanding the impact performance of structures made from carbon-fibre composites, effects of structural geometry, material type and impact location have been investigated in skin-stringer panels representative of aircraft stru
Autor:
Richard J. Matyi, Benjamin D. Briggs, Nathaniel C. Cady, Jihan O. Capulong, S.M. Bishop, Michael Q. Hovish
Publikováno v:
2012 IEEE International Integrated Reliability Workshop Final Report.
This paper compares the resistive switching properties of crystalline and amorphous HfO x thin-film resistive memory devices (RMDs), which were fabricated by physical vapor deposition films using two different O 2 partial pressures. The crystallinity