Zobrazeno 1 - 2
of 2
pro vyhledávání: '"S.L. Von Bruns"'
Autor:
Peter B. Gray, P. Chapman, M. Gordon, R. Previty-Kelly, Douglas B. Hershberger, Robert M. Rassel, Alan F. Norris, Alvin J. Joseph, S.L. Von Bruns, Mattias E. Dahlstrom, Michael J. Zierak, Michael L. Gautsch, J. Dunn, Panglijen Candra, Natalie B. Feilchenfeld, J. Lukaitis, Renata Camillo-Castillo, S. St Onge, Benjamin T. Voegeli, K. Watson, Nicholas Theodore Schmidt, Z.X. He
Publikováno v:
2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
For the first time, we report a 0.24 mum SiGe BiCMOS technology that offers full suite of active device including three distinct NPNs, a vertical PNP, CMOS supporting three different operating-voltages, and wide range of passive devices. In particula
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::680dcea7dc29df2e8835d3376d5fc255
https://doi.org/10.1109/bipol.2008.4662721
https://doi.org/10.1109/bipol.2008.4662721
Autor:
S.L. Von Bruns, R.L. Anderson
Publikováno v:
IEEE Transactions on Electron Devices. 34:75-82
Hot-electron-induced degradation in n-channel Si MOSFET's as a result of stress voltages applied at 77 K was studied. The devices were stressed at 77 K for 48 h with a drain voltage of 5 V and a gate voltage corresponding to that at which maximum sub
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cc81735ffa0a15fc25d75980f1fb01a
https://doi.org/10.1109/t-ed.1987.22887
https://doi.org/10.1109/t-ed.1987.22887