Zobrazeno 1 - 10
of 72
pro vyhledávání: '"S.L. Tu"'
Publikováno v:
Journal of Dairy Science, Vol 105, Iss 11, Pp 8677-8687 (2022)
ABSTRACT: Indigenous microorganisms are important components of the complex ecosystem of many dairy foods including cheeses, and they are potential contributors to the development of a specific cheese's sensory properties. Among these indigenous micr
Externí odkaz:
https://doaj.org/article/2de97417d717425fbc4cf97ab6bf9b40
Autor:
Y.H. Lin, Chiu-yu Tseng, H.Y. Gu, Lin-Shan Lee, S.H. Hsieh, S.L. Tu, Yungling Leo Lee, C.H. Chen, F.H. Liu, C.H. Chang
Publikováno v:
IEEE Transactions on Speech and Audio Processing. 1:158-179
The first successfully implemented real-time Mandarin dictation machine, which recognizes Mandarin speech with very large vocabulary and almost unlimited texts for the input of Chinese characters into computers, is described. The machine is speaker-d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89a4328057caececc1d14ded295d1a55
https://doi.org/10.1109/89.222876
https://doi.org/10.1109/89.222876
Publikováno v:
IEEE Transactions on Applied Superconductivity. 3:2325-2328
The weak-link properties of laser-ablated YBa/sub 2/Cu/sub 3/O/sub 7-x/ (YBCO) thin films on MgO-bicrystals with different misorientation angle ( theta ) along the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8831c380ec2e465f83cc38be4f694fbd
https://doi.org/10.1109/77.233436
https://doi.org/10.1109/77.233436
Publikováno v:
IEEE Transactions on Applied Superconductivity. 3:2438-2441
A superconducting quantum interference device (SQUID) was fabricated from a YBCO thin film on MgO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b75d988266356523b0bd0f40587ed03
https://doi.org/10.1109/77.233948
https://doi.org/10.1109/77.233948
Publikováno v:
Physica C: Superconductivity. 195:241-257
The optimum deposition conditions for growing Y 1 Ba 2 Cu 3 O 7 -δ superconducting thin films in situ by using xenon, Nd:YAG, and KrF excimer lasers with CO 2 laser-heated substrates were studied.The dependences of the T co and microstructure of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba3697691d4f5453bde2ec58ec53b5be
https://doi.org/10.1016/0921-4534(92)90347-f
https://doi.org/10.1016/0921-4534(92)90347-f
Publikováno v:
2005 Quantum Electronics and Laser Science Conference.
We have investigated a novel photodetector structure of coupling superlattice and quantum wells. This device can be operated at low bias range and even the photovoltaic mode. The broadband response is achieved by this structure.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a334bf408b5cdc4172ab6a7b5410973
https://doi.org/10.1109/qels.2005.1549099
https://doi.org/10.1109/qels.2005.1549099
Publikováno v:
International Electron Devices and Materials Symposium.
We have demonstrated a molecular beam epitaxy (MBE) regrowth technique on GaAs Substrate using thin In-passivation layer. After the growth of buffer layers, the substrate temperature was lowered to deposit a thin In layer at about 50/spl deg/C, to en
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2125933013bfa63d69d8469636fd4e52
https://doi.org/10.1109/edms.1994.771303
https://doi.org/10.1109/edms.1994.771303
Publikováno v:
International Electron Devices and Materials Symposium.
We have investigated the current voltage characteristics of In/sub 0.3/Ga/sub 0.7/As/In0.29/Al/sub 0.71/As double-barrier resonant tunneling diodes grown on GaAs substrates. These devices exhibit peak-to-valley current ratios as high as 7.6 and 19.5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b05d9046e1dc28b7f1821b3c9364097d
https://doi.org/10.1109/edms.1994.771193
https://doi.org/10.1109/edms.1994.771193
Publikováno v:
Electronics Letters. 30:826-828
The authors investigate the current-voltage characteristics of In/sub 0.3/Ga/sub 0.7/As/In/sub 0.29/Al/sub 0.71/As double-barrier resonant tunnelling diodes grown on GaAs substrates. These devices exhibit peak-to-valley current ratios as high as 7.6
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::598a6237e1f133f2c4b1f8b6b21fa653
https://doi.org/10.1049/el:19940435
https://doi.org/10.1049/el:19940435
Publikováno v:
8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings.
High-speed IGBTs fabricated using direct wafer bonding and implanted N+ buffer layer are described and analyzed in this paper. The trade-off between on-state voltage drop and turn-off fall time can be controlled by varying the N+ implant dose prior t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14fd828c32bf65b153a5e9578d7b461f
https://doi.org/10.1109/ispsd.1996.509511
https://doi.org/10.1109/ispsd.1996.509511