Zobrazeno 1 - 10
of 325
pro vyhledávání: '"S.L. Tu"'
Autor:
Qi, Fengyan1 (AUTHOR) fengyanqi_zjyc@163.com, Song, Wenbing1 (AUTHOR) wenbingsong1994@163.com, Chen, Zhiwei2 (AUTHOR) zhiweichen_zju@163.com, Zhang, Jian1 (AUTHOR) wenbingsong1994@163.com
Publikováno v:
Materials (1996-1944). Aug2024, Vol. 17 Issue 16, p3927. 14p.
Autor:
Zhang, Yulin1,2 (AUTHOR) yulinzapple@163.com, Gao, Haiyang1 (AUTHOR) gaohy0626@yeah.net, Dou, Hongliang1 (AUTHOR) douhl@sinogaf.cn, Yang, Jinzhen1 (AUTHOR) 13750283185@139.com, Wang, Jingxin1 (AUTHOR) 13828824320@139.com, Xiang, Zuofu3 (AUTHOR) xiangzf@csuft.edu.cn, Hua, Yan1 (AUTHOR) xiangzf@csuft.edu.cn
Publikováno v:
Diversity (14242818). Jul2024, Vol. 16 Issue 7, p386. 15p.
Autor:
McElhinney, Kathryn L.1,2,3 (AUTHOR) kmcelhinney@luriechildrens.org, Rowell, Erin E.1,2 (AUTHOR), Laronda, Monica M.1,3,4 (AUTHOR) mlaronda@luriechildrens.org
Publikováno v:
Bioengineering (Basel). Jul2024, Vol. 11 Issue 7, p734. 14p.
Autor:
Y.H. Lin, Chiu-yu Tseng, H.Y. Gu, Lin-Shan Lee, S.H. Hsieh, S.L. Tu, Yungling Leo Lee, C.H. Chen, F.H. Liu, C.H. Chang
Publikováno v:
IEEE Transactions on Speech and Audio Processing. 1:158-179
The first successfully implemented real-time Mandarin dictation machine, which recognizes Mandarin speech with very large vocabulary and almost unlimited texts for the input of Chinese characters into computers, is described. The machine is speaker-d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89a4328057caececc1d14ded295d1a55
https://doi.org/10.1109/89.222876
https://doi.org/10.1109/89.222876
Publikováno v:
IEEE Transactions on Applied Superconductivity. 3:2325-2328
The weak-link properties of laser-ablated YBa/sub 2/Cu/sub 3/O/sub 7-x/ (YBCO) thin films on MgO-bicrystals with different misorientation angle ( theta ) along the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8831c380ec2e465f83cc38be4f694fbd
https://doi.org/10.1109/77.233436
https://doi.org/10.1109/77.233436
Publikováno v:
IEEE Transactions on Applied Superconductivity. 3:2438-2441
A superconducting quantum interference device (SQUID) was fabricated from a YBCO thin film on MgO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b75d988266356523b0bd0f40587ed03
https://doi.org/10.1109/77.233948
https://doi.org/10.1109/77.233948
Publikováno v:
Physica C: Superconductivity. 195:241-257
The optimum deposition conditions for growing Y 1 Ba 2 Cu 3 O 7 -δ superconducting thin films in situ by using xenon, Nd:YAG, and KrF excimer lasers with CO 2 laser-heated substrates were studied.The dependences of the T co and microstructure of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba3697691d4f5453bde2ec58ec53b5be
https://doi.org/10.1016/0921-4534(92)90347-f
https://doi.org/10.1016/0921-4534(92)90347-f
Publikováno v:
2005 Quantum Electronics and Laser Science Conference.
We have investigated a novel photodetector structure of coupling superlattice and quantum wells. This device can be operated at low bias range and even the photovoltaic mode. The broadband response is achieved by this structure.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a334bf408b5cdc4172ab6a7b5410973
https://doi.org/10.1109/qels.2005.1549099
https://doi.org/10.1109/qels.2005.1549099
Publikováno v:
International Electron Devices and Materials Symposium.
We have demonstrated a molecular beam epitaxy (MBE) regrowth technique on GaAs Substrate using thin In-passivation layer. After the growth of buffer layers, the substrate temperature was lowered to deposit a thin In layer at about 50/spl deg/C, to en
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2125933013bfa63d69d8469636fd4e52
https://doi.org/10.1109/edms.1994.771303
https://doi.org/10.1109/edms.1994.771303
Publikováno v:
International Electron Devices and Materials Symposium.
We have investigated the current voltage characteristics of In/sub 0.3/Ga/sub 0.7/As/In0.29/Al/sub 0.71/As double-barrier resonant tunneling diodes grown on GaAs substrates. These devices exhibit peak-to-valley current ratios as high as 7.6 and 19.5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b05d9046e1dc28b7f1821b3c9364097d
https://doi.org/10.1109/edms.1994.771193
https://doi.org/10.1109/edms.1994.771193