Zobrazeno 1 - 10
of 19
pro vyhledávání: '"S.L. Titcomb"'
Publikováno v:
IEEE Transactions on Components, Hybrids, and Manufacturing Technology. 15:397-404
The advantages of operating CMOS at liquid nitrogen temperature (LN) are attributed to increased carrier mobility, reduced subthreshold swing, increased conductivity, reduced leakage, an improved device and circuit reliability such as electromigratio
Publikováno v:
Cryogenics. 30:1064-1068
Carrier freezeout calculations must take into account the occupancy of all bound (ground and excited) impurity states. The calculations can be simplified if a single effective state energy which is a function of impurity concentration and temperature
Publikováno v:
Proceedings of the Workshop on Low Temperature Semiconductor Electronics.
Hot-carrier degradation in lightly-doped drain (LDD) n-channel MOSFETs stressed at 77 K and 300 K was studied. Both short (L=1.3 mu m) and long (L=50 mu m) channel devices were stressed with both DC and pulsed gate biases. Short channel devices were
Publikováno v:
Proceedings of 1994 IEEE Frontiers in Education Conference - FIE '94.
We have developed an engineering design competition for pre-college students which is educational, fun, and successful. Now in its 4th year, nearly half of the high schools in the state participate at some level, and a number of these have incorporat
Publikováno v:
1991 Proceedings 41st Electronic Components & Technology Conference.
Publikováno v:
International Technical Digest on Electron Devices.
A quasi-classical generation formulation is analytically developed for heavily doped silicon where electric field phenomena are important. This quasi-classical formalism is suitable for modeling thermal and electric field-dependent leakage mechanisms
Autor:
S.L. Titcomb
Publikováno v:
Proceedings Frontiers in Education 1997 27th Annual Conference. Teaching and Learning in an Era of Change.
Summary form only given. The author describes how he is currently developing multimedia interactive tutorials for an electrical engineering lab course which incorporate instructions for each lab experiment control and data acquisition capabilities, a
Autor:
H.J. Carpenter, S.L. Titcomb
Publikováno v:
30th Annual Frontiers in Education Conference. Building on A Century of Progress in Engineering Education. Conference Proceedings (IEEE Cat. No.00CH37135).
The Design TASC (Technology and Science Connection) Engineering Design Competition, which we created for Vermont high schools, is now in its tenth year. The basic format is still very much the same as described in a previous paper (S.L. Titcomb et al
Autor:
S.L. Titcomb
Publikováno v:
30th Annual Frontiers in Education Conference. Building on A Century of Progress in Engineering Education. Conference Proceedings (IEEE Cat. No.00CH37135).
We describe a teacher's guide for those wishing to incorporate engineering concepts and practices into the high school science and math curriculum. The teacher's guide includes the following aspects of engineering design: problem analysis, brainstorm
Autor:
D.P. Foty, S.L. Titcomb
Publikováno v:
IEEE Transactions on Electron Devices. 34:107-113
Thermal effects in n-channel enhancement-mode MOSFET's operated at cryogenic temperatures are discussed. Device heating is identified as the cause of drain current transients and the origin of this phenomenon is considered. Experimental results are p