Zobrazeno 1 - 1
of 1
pro vyhledávání: '"S.K. Ghandri"'
Publikováno v:
MRS Proceedings. 216
Hg1-xCdxTe layers, grown by the organometallic vapor phase epitaxy (OMVPE), are p-type with carrier concentrations around 4 × 1016/cm3 due to the Group II vacancies in them. Following a Hg saturated anneal at 220°C, these layers become n-type with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d9f9af878321464b3f28bda48dc7edb
https://doi.org/10.1557/proc-216-87
https://doi.org/10.1557/proc-216-87
