Zobrazeno 1 - 10
of 30
pro vyhledávání: '"S.J.A. Adams"'
Autor:
I. Hauksson, S. Y. Wang, Kevin Alan Prior, H. Stewart, J. Simpson, J.M. Wallace, B. C. Cavenett, S.J.A. Adams
Publikováno v:
Journal of Electronic Materials. 22:431-435
The doping properties of nitrogen in ZNSe to produce p-type material have been explored by photo-assisted molecular beam epitaxy. These prelimiNAry results show that changes in NA - ND with ultraviolet irradiation are due to the effect of the laser o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f1d5873a1ca9163f21d5366068f4eae
https://doi.org/10.1007/bf02661608
https://doi.org/10.1007/bf02661608
Autor:
S.J.A. Adams, J. Simpson, H. Stewart, Kevin Alan Prior, S. Y. Wang, I. Hauksson, B. C. Cavenett, Yoichi Kawakami
Publikováno v:
Physica B: Condensed Matter. 185:496-499
The realization of p-doping with nitrogen of ZnSe and related alloys has enabled the development of quantum well laser structures. Similar structures can also be fabricated by MBE as optical modulators using the Stark effect on the exciton absorption
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72276cdd6fa4f841768be4848211b6bf
https://doi.org/10.1016/0921-4526(93)90285-e
https://doi.org/10.1016/0921-4526(93)90285-e
Autor:
B. C. Cavenett, Kevin Alan Prior, H. Stewart, J. Simpson, I. Hauksson, S.J.A. Adams, S. Y. Wang
Publikováno v:
Journal of Crystal Growth. 127:379-382
We report the first use of an electrochemical cell to dope ZnSe with potassium and the comparison of ZnSe: K with nitrogen doped ZnSe:N. At growth temperatures of 280°C potassium produces much lower doping levels but shows clear acceptor bound excit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e9db72df1f50be61a37d7f1e0e5c95f
https://doi.org/10.1016/0022-0248(93)90643-b
https://doi.org/10.1016/0022-0248(93)90643-b
Autor:
Kevin Alan Prior, S. Y. Wang, S.J.A. Adams, J. Simpson, H. Stewart, I. Hauksson, B. C. Cavenett
Publikováno v:
Journal of Crystal Growth. 127:327-330
Photoassisted p-type doping of ZnSe has been performed for the first time using active nitrogen doping and UV laser illumination of the growth surface. Above band-gap irradiation during growth results in a decrease in Se coverage, as is the case for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5f89ec12b9aed56064726df79e8956e
https://doi.org/10.1016/0022-0248(93)90631-6
https://doi.org/10.1016/0022-0248(93)90631-6
Autor:
S.J.A. Adams, Ben Murdin, C. R. Pidgeon, K Mitchell, Ian Galbraith, B. C. Cavenett, B. A. Miller, R. S. Smith, P. B. Kirby
Publikováno v:
Physical Review B. 46:13611-13614
We have made the first direct measurement of the electron effective-mass renormalization in n-type modulation-doped ${\mathrm{Al}}_{0.23}$${\mathrm{Ga}}_{0.77}$As/${\mathrm{In}}_{0.08}$${\mathrm{Ga}}_{0.92}$As/GaAs quantum wells. The technique takes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09d5d6b737d724d9235aec309d8fad76
https://doi.org/10.1103/physrevb.46.13611
https://doi.org/10.1103/physrevb.46.13611
Publikováno v:
Semiconductor Science and Technology. 7:460-463
ZnSe has been deposited on (100) GaAs by molecular beam epitaxy under a uv irradiance of 4 W cm-2. At this level, the ZnSe growth rate can be severely reduced or stopped altogether. The authors show for the first time that the reduction in growth rat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d98dec917dcdbf1ab971e738f190ae6
https://doi.org/10.1088/0268-1242/7/4/003
https://doi.org/10.1088/0268-1242/7/4/003
Autor:
C R Stanley, S.J.A. Adams, Ata Koohian, A H Kean, Ibrahim R. Agool, K Mitchell, C. R. Pidgeon, B. C. Cavenett, M G Wright, N Ahmed
Publikováno v:
Semiconductor Science and Technology. 7:357-363
Novel far-infrared optically detected cyclotron resonance (FIR-ODCR) techniques are used to investigate GaAs epilayers and the results are compared with conventional cyclotron resonance performed at far-infrared frequencies and ODCR at microwave freq
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec5c82e09392f20ebe6c5bec918f6c72
https://doi.org/10.1088/0268-1242/7/3/014
https://doi.org/10.1088/0268-1242/7/3/014
Autor:
Kevin Alan Prior, J.M. Wallace, S. Y. Wang, J. Simpson, S.J.A. Adams, J.J. Hunter, B. C. Cavenett, H. Stewart
Publikováno v:
Journal of Crystal Growth. 117:320-323
We report the use of an electrochemical iodine cell to dope epitaxial ZnSe grown by molecular beam epitaxy (MBE) over a range of carrier concentrations from 1016 to 1019 cm-3. The doping levels throughout the layers have been measured by electrochemi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe51a450347685f0cac09de65d120db8
https://doi.org/10.1016/0022-0248(92)90767-d
https://doi.org/10.1016/0022-0248(92)90767-d
Publikováno v:
Journal of Crystal Growth. 117:134-138
Photo-assisted molecular beam epitaxy of ZnSe on GaAs substrates with UV irradiation is reported. The growth rate is observed to be a function of the layer thickness and at high UV levels growth can be totally supressed. Photo-assisted doping has bee
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2db2dc2bd6313ac349c79b82c73ed4c0
https://doi.org/10.1016/0022-0248(92)90731-w
https://doi.org/10.1016/0022-0248(92)90731-w
Autor:
M. T. Emeny, Eoin P. O'Reilly, S.J.A. Adams, M. J. L. S. Haines, B. C. Cavenett, A. Ghiti, C. R. Pidgeon, Ibrahim R. Agool, N Ahmed, K Mitchell
Publikováno v:
Physical Review B. 43:11944-11949
Premiere observation du pic predit theoriquement pour l'energie de liaison excitonique en fonction de la largeur du puits quantique. Les valeurs sont obtenues directement a partir des mesures magneto-optiques inter-bandes et comparees aux calculs fon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67cc8355f175f467b6cccd27fda70885
https://doi.org/10.1103/physrevb.43.11944
https://doi.org/10.1103/physrevb.43.11944