Zobrazeno 1 - 10
of 32
pro vyhledávání: '"S.J. Wojtczuk"'
Publikováno v:
IEEE Transactions on Nuclear Science. 47:1364-1370
Semiconductor thermal neutron detection devices based on /sup 10/B-coated high-purity GaAs films were investigated. The fundamental device consisted of high-purity /spl nu/-type epitaxial GaAs films grown onto n-type GaAs substrates. Two blocking con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2dfbaa7cefa9b283e1b7c8d25692079f
https://doi.org/10.1109/23.872979
https://doi.org/10.1109/23.872979
Autor:
H.L. Cotal, Scott R. Messenger, Y.C.M. Yeh, Robert J. Walters, S.J. Wojtczuk, M.L. Timmons, H.B. Serreze, P. Sharps, P.A. Iles, E.A. Burke
Publikováno v:
Solar Energy Materials and Solar Cells. 50:305-313
An analysis of the radiation response of state-of-the-art InP/Si, InGaP, and dual junction (DJ) InGaP/GaAs space solar cells under both electron and proton irradiated is presented. The degradation data are modeled using the theory of displacement dam
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3f021da456a8d0c20d20006ab5e8778
https://doi.org/10.1016/s0927-0248(97)00161-x
https://doi.org/10.1016/s0927-0248(97)00161-x
Autor:
S.J. Wojtczuk, H. B. Serreze, S.R. Messenger, Robert J. Walters, Michael A. Xapsos, H.L. Cotal, G.P. Summers
Publikováno v:
Journal of Applied Physics. 82:2164-2175
The effect of 1 MeV electron and 3 MeV proton irradiation on the performance of n+p InP solar cells grown heteroepitaxially on Si (InP/Si) substrates is presented. The radiation response of the cells was characterized by a comprehensive series of mea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec0a1bee23360c6fe1d697fe3877b176
https://doi.org/10.1063/1.366024
https://doi.org/10.1063/1.366024
Autor:
A. Keshavarzi, C. Bajgar, T.B. Stellwag, S. M. Vernon, S.J. Wojtczuk, K. Emery, S.P. Tobin, Michael R. Melloch, S. Venkatensan, Mark Lundstrom
Publikováno v:
IEEE Transactions on Electron Devices. 37:469-477
A critical assessment of the photovoltaic quality of epitaxial GaAs grown by metal-organic chemical vapor deposition (MOCVD) and by molecular-beam epitaxy (MBE) is reported. Epitaxial films of nominally identical structure were grown by the two techn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a986a90201d6f0e0e0127852b15cb755
https://doi.org/10.1109/16.46385
https://doi.org/10.1109/16.46385
Publikováno v:
Proceedings of the 24th Intersociety Energy Conversion Engineering Conference.
The experimental results for several technical approaches aimed at achieving highly efficient solar cells for space-power applications are reported. Efficiencies of up to 24.5% (170X, AM0) and 21.7% (1X, AM0) have been achieved with homoepitaxial GaA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9bf3cbffb3399deba51c974fc7eae4c8
https://doi.org/10.1109/iecec.1989.74560
https://doi.org/10.1109/iecec.1989.74560
Autor:
R.L. Walters, S.J. Wojtczuk, Nasser H. Karam, S.M. Vernon, P. Colter, G.P. Summers, R.L. Statler, P. Gouker
Publikováno v:
Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC).
Both PN and NP InP solar cells on Si wafers were made with AM0 one-sun efficiencies up to 11%. Cells were irradiated to an equivalent fluence of 4/spl times/10/sup 18/ 1 MeV electrons/cm/sup 2/ with alpha particles from an Am-241 source, losing only
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::711fe9be620dbf4047ef65108fd21417
https://doi.org/10.1109/wcpec.1994.520546
https://doi.org/10.1109/wcpec.1994.520546
Publikováno v:
Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC).
The 1 MeV electron irradiation-induced degradation of both heteroepitaxial and homoepitaxial p/n InP solar cells grown by MOCVD is presented. The heteroepitaxial cells were grown on Si substrates (InP/Si). The cells were characterized through current
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b620790d9af6082479a33606fdd15429
https://doi.org/10.1109/wcpec.1994.521646
https://doi.org/10.1109/wcpec.1994.521646
Publikováno v:
The Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991.
GaAs/Ge two-junction tandems up to 23.4% efficient at 9 AM0 suns were made. This efficiency is a record for a monolithic, two-terminal GaAs/Ge tandem cell, and also exceeds the best efficiency reported (23%) for a single-junction GaAs concentrator at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3f21ff5dae34ec92212ec717e0b1409
https://doi.org/10.1109/pvsc.1991.169185
https://doi.org/10.1109/pvsc.1991.169185
Publikováno v:
IEEE Conference on Photovoltaic Specialists.
The development of GaAs solar cells having a 1-sun, AM1.5 efficiency of 24.8% and a concentrator having an AM1.5 efficiency of 28.7% at 200 suns (both independently measured) is described. Corresponding AM0 efficiencies are 21.7 and 24.5%. These are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd3d6bf06dc4be49744be8e9cebca802
https://doi.org/10.1109/pvsc.1990.111610
https://doi.org/10.1109/pvsc.1990.111610
Autor:
S.J. Wojtczuk, H.B. Serreze, H.L. Cotal, G.P. Summers, S.R. Messenger, Robert J. Walters, M.A. Xapsos
Publikováno v:
Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997.
InP/Si solar cells have been irradiated with 3 MeV protons to very large fluences where carrier removal, instead of decreases in minority carrier diffusion length, dominates the radiation response. In this regime, radiation-induced expansion of the b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de87ae93dc3332034548cfd719622250
https://doi.org/10.1109/pvsc.1997.654256
https://doi.org/10.1109/pvsc.1997.654256