Zobrazeno 1 - 10
of 41
pro vyhledávání: '"S.J. Eglash"'
Publikováno v:
Journal of Crystal Growth. 127:728-731
Electrical properties of MBE grown AlGaAsSb layers with various compositions lattice matched to GaSb were studied. It is shown that donors in AlSb-rich compositions are DX-like centers with thermal ionization energy around 0.1-0.2 eV. In undoped p-ty
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b116cda9becea99e75ae426dd0b012af
https://doi.org/10.1016/0022-0248(93)90721-8
https://doi.org/10.1016/0022-0248(93)90721-8
Autor:
H.K. Choi, S.J. Eglash
Publikováno v:
IEEE Journal of Quantum Electronics. 27:1555-1559
Double-heterostructure Ga/sub 0.84/In/sub 0.16/As/sub 0.14/Sb/sub 0.86/-Al/sub 0.5/Ga/sub 0.5/As/sub 0.04/Sb/sub 0.96/ diode lasers emitting at 2.27 mu m were grown by molecular beam epitaxy on GaSb substrates. For pulsed operation of broad-stripe la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::355e87c380ef19cdfa0439177012c047
https://doi.org/10.1109/3.89977
https://doi.org/10.1109/3.89977
Autor:
George W. Turner, S.J. Eglash
Publikováno v:
Journal of Crystal Growth. 111:105-109
Frequency-domain techniques have been applied to the analysis of RHEED oscillation data taken during MBE growth of AlGaAs at substrate temperatures from 580 to 790°C and at various V/III ratios. In addition to permitting rapid and highly accurate me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51bf047cd0f21b942ca6adcc49f2dfb1
https://doi.org/10.1016/0022-0248(91)90955-5
https://doi.org/10.1016/0022-0248(91)90955-5
Publikováno v:
Journal of Crystal Growth. 111:669-676
For the fabrication of diode lasers emitting near 2.3 μm, molecular beam epitaxy has been used to grow double heterostructures consisting of a Ga 0.84 In 0.16 As 0.14 Sb 0.86 active layer and Al 0.50 Ga 0.50 As 0.04 Sb 0.96 confining layers lattice
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe09d40329645503862a3d0bafcd98ec
https://doi.org/10.1016/0022-0248(91)91061-e
https://doi.org/10.1016/0022-0248(91)91061-e
Autor:
H.K. Choi, S.J. Eglash
Publikováno v:
LEOS '92 Conference Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32ed17fe52038bf12ec5584d1978b504
https://doi.org/10.1109/leos.1992.693987
https://doi.org/10.1109/leos.1992.693987
Publikováno v:
50th Annual Device Research Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e32b9cbc7fd2b0fa38eadf5727b27341
https://doi.org/10.1109/drc.1992.671894
https://doi.org/10.1109/drc.1992.671894
Publikováno v:
IEEE Photonics Technology Letters. 6:7-9
High-power diode lasers emitting at /spl sim/1.9 /spl mu/m have been fabricated from a quantum-well heterostructure having an active region consisting of five GaInAsSb wells and six AlGaAsSb barriers. For devices 300 /spl mu/m wide and 1000 /spl mu/m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb270249abab85f1e4dd6baabe0ebad3
https://doi.org/10.1109/68.265873
https://doi.org/10.1109/68.265873
Publikováno v:
Proceedings of LEOS '93.
Mid-infrared diode lasers (/spl lambda/=1.7-5 /spl mu/m) fabricated from GaInAsSb/AlGaAsSb heterostructures grown on GaSb substrates have been under development at Lincoln Laboratory for the past five years. Performance breakthroughs have been achiev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::013984e89e65e57f2ff364246eec64f6
https://doi.org/10.1109/leos.1993.379393
https://doi.org/10.1109/leos.1993.379393
Publikováno v:
IEEE Electron Device Letters. 5:329-332
A thin, highly Si-doped (n-type) interfacial layer is used for controlled barrier lowering in n-type GaAs. The thickness and the doping density of the interfacial n+ layer in the range of 50-100 A, are extracted from the measured electrical character
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6654aad7edc80f794738ea0f791da11c
https://doi.org/10.1109/edl.1984.25934
https://doi.org/10.1109/edl.1984.25934
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