Zobrazeno 1 - 10
of 65
pro vyhledávání: '"S.J Prasad"'
Publikováno v:
Journal of Operational Oceanography; February 2024, Vol. 17 Issue 1, p12-27, 16p
Akademický článek
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Autor:
S.J Prasad, T.M. Balakrishnan Nair
Publikováno v:
International Oil Spill Conference Proceedings. 2021
686884 Determining the spilled volume of the marine oil pollutant is an essential requisite for the oil spill modellers and the responders. Generally, the mass of the spilled pollutant is computed from the total quantity and the remaining quantity of
Publikováno v:
IndraStra Global.
A Lewis acid catalyzed tandem nucleophilic addition/oxa-Michael reaction was developed for the synthesis of cis-2,6-disubstituted tetrahydropyran (THP) derivatives in good yields with excellent diastereoselectivities. The strategy was successfully us
Akademický článek
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Autor:
I. Beers, John Ebner, C. Haynes, S. Diamond, G. Pubanz, S. Park, B. Vetanen, Agoston Agoston, S.J. Prasad, S. Sanielevici
Publikováno v:
Microelectronic Engineering. 19:413-416
A 45GHz HBT IC technology with 1.4THz Schottky diodes is described. The process is mesa isolated and implant-free. The process integrates NiCr resistors, MIM capacitors and air-bridge inductors. A divide-by-eight prescaler shows good performance up t
Publikováno v:
SPE Computer Applications. 3:5-10
Summary This paper describes the functionality and underlying programming paradigms of Shell’s simulator-related reservoir-engineering graphics system. This system includes the simulation postprocessing programs Reservoir Display System (RDS) and F
Autor:
S.J. Prasad
Publikováno v:
Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting.
The author describes a method of determining the base and emitter resistances of AlGaAs/GaAs heterojunction bipolar transistors (HBTs) at a given bias from the S-parameter measurements at a single frequency. The base resistance values agree closely w
Autor:
S.J. Prasad
Publikováno v:
GaAs IC Symposium Technical Digest 1992.
A simple method of monitoring the base and emitter resistances of AlGaAs/GaAs heterojunction bipolar transistors (HBTs) at a given bias is described. This method can also be used to measure the collector capacitance. This does not require any special
Autor:
S.J. Prasad, C. Haynes
Publikováno v:
1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).
A GaInP/GaAs HBT YIG oscillator tunable from 6 to 9 GHz is presented. The HBT used in this circuit has an f/sub T/ and f/sub max/ of 42 and 33 GHz respectively. At 7.8 GHz, the phase noise of the oscillator was -85 dBc/Hz when offset from the carrier